Datasheet > RJH65T04BDPM-A0

RJH65T04BDPM-A0

更新时间： 2023-12-20 18:44:36

品牌	Logo	应用领域
瑞萨 - RENESAS		双极性晶体管
页数	文件大小	规格书
12页	209K
描述
IGBT 650V 30A TO-3PFP Built-In FRD

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RJH65T04BDPM-A0 数据手册

Datasheet

RJH65T04BDPM-A0

650V - 30A - IGBT

Power Switching

R07DS1366EJ0200

Rev.2.00

Oct.05.2022

Features



Trench gate and thin wafer technology

Built in fast recovery diode in one package

Low collector to emitter saturation voltage



High speed switching

t_f= 45 ns typ. (at V_CC= 400 V, V_GE= 15 V,

I_C= 30 A, Rg = 10 , Ta=25 C, inductive load)

Operation frequency (20kHz ≤ f ˂ 40kHz)

Applications: Power Factor Correction circuit



V_CE(sat)= 1.5 V typ. (at I_C= 30 A, V_GE= 15 V,

Ta = 25 C)



Quality grade: Standard

Key Performance

Type

V_CES

I_C

V_CE(sat), T_C=25C

I_F

T_j

RJH65T04BDPM-A0

650 V

30 A

1.5 V

50 A

175 C

Outline

RENESAS Package code: PRSS0003ZP-A

(Package name: TO-3PFP)

1. Gate

2. Collector

3. Emitter

R07DS1366EJ0200 Rev.2.00

Oct.05.2022

Page 1 of 11

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