Datasheet > RJ2GE0R00X

RJ2GE0R00X

更新时间： 2024-12-01 09:48:47

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		放大器
页数	文件大小	规格书
18页	547K
描述
Enhancement Mode pHEMT Technology (E-pHEMT) High Linearity Amplifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RJ2GE0R00X 数据手册

Document Number: MMG20271H

Rev. 0, 12/2010

Freescale Semiconductor

Technical Data

Enhancement Mode pHEMT

Technology (E--pHEMT)

MMG20271HT1

High Linearity Amplifier

The MMG20271H is a high dynamic range, low noise amplifier MMIC, housed

in a QFN 3x3 standard plastic package. It is ideal for Cellular, PCS, LTE,

TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the

1500 to 2700 MHz frequency range. With high OIP3 and low noise figure, it can

be utilized as a driver amplifier in the transmit chain and as a second stage LNA

in the receive chain.

1500--2700 MHz, 16 dB

27.5 dBm

Features

E--pHEMT

•

Frequency: 1500--2700 MHz

Noise Figure: 1.7 dB @ 2140 MHz

P1dB: 27.5 dBm @ 2140 MHz

Small--Signal Gain: 16 dB @ 2140 MHz

Third Order Output Intercept Point: 42 dBm @ 2140 MHz

Single 5 Volt Supply

Supply Current: 180 mA

CASE 2131--01

QFN 3x3

50 Ohm Operation (some external matching required)

Low Cost QFN Surface Mount Package

RoHS Compliant

PLASTIC

In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.

Table 1. Typical Performance ⁽¹⁾

Table 2. Maximum Ratings

Rating

Supply Voltage

Symbol

Value

Unit

1500 2140 2700

Symbol MHz MHz MHz Unit

Characteristic

400

Noise Figure

2.0

1.7

1.9

Supply Current

dBm

°C

Input Return Loss

(S11)

IRL

-- 1 6

-- 1 4

-- 1 7

RF Input Power

Storage Temperature Range

stg

--65 to +150

150

Output Return Loss

(S22)

ORL

-- 2 0

-- 2 2

-- 1 7

(2)

Junction Temperature

°C

2. For reliable operation, the junction temperature should not

Small--Signal Gain

(S21)

exceed 150°C.

Power Output @

1dB Compression

P1db

IIP3

27.5

dBm

Third Order Input

Intercept Point

Third Order Output

Intercept Point

OIP3

1. V = 5 Vdc, T = 25°C, 50 ohm system, application circuit tuned

for specified frequency.

Table 3. Thermal Characteristics

(3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

°C/W

Case Temperature 96°C, 5 Vdc, 190 mA, no RF applied

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MMG20271HT1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...18

中文翻译

下载PDF

与RJ2GE0R00X相关器件

型号	品牌	获取价格	描述	数据表
RJ2M330MG400A00CE0	HWE	获取价格	小型铝电
RJ2M390MG450A00CE0	HWE	获取价格	小型铝电
RJ2M470MG500A00CE0	HWE	获取价格	小型铝电
RJ2M560MI400A00CE0	HWE	获取价格	小型铝电
RJ2M680MI450A00CE0	HWE	获取价格	小型铝电
RJ2M820MI500A00CE0	HWE	获取价格	小型铝电
RJ2S-C-A120	ETC	获取价格	RJ Series - General Purpose Relays
RJ2S-C-A24	ETC	获取价格	RJ Series - General Purpose Relays
RJ2S-C-A240	ETC	获取价格	RJ Series - General Purpose Relays
RJ2S-C-D100	ETC	获取价格	RJ Series - General Purpose Relays

与RJ2GE0R00X相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

RJ2GE0R00X

RJ2GE0R00X 数据手册

与RJ2GE0R00X相关器件

与RJ2GE0R00X相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RJ2GE0R00X

RJ2GE0R00X 数据手册

与RJ2GE0R00X相关器件

与RJ2GE0R00X相关文章

您还可以找

您在本页遇到什么问题？