Datasheet > RHU002N06

RHU002N06

更新时间： 2024-09-20 22:23:59

品牌	Logo	应用领域
罗姆 - ROHM		开关
页数	文件大小	规格书
5页	64K
描述
Switching (60V, 200mA)

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中文翻译

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数据手册

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RHU002N06 数据手册

RHU002N06

Transistors

Switching (60V, 200mA)

RHU002N06

zExternal dimensions (Unit : mm)

zFeatures

1) Low on-resistance.

2) High ESD.

3) High-speed switching.

4) Low-voltage drive (4V).

5) Easily designed drive circuits.

6) Easy to use in parallel.

1.25

2.1

0.1Min.

Each lead has same dimensions

zStructure

Silicon N-channel

MOSFET transistor

Abbreviated symbol : KP

ROHM : UMT3

EIAJ : SC-70

(1) Source

(2) Gate

JEDEC : SOT-323

(3) Drain

zEquivalent circuit

(3)

(2)

(1) Source

(2) Gate

(3) Drain

Gate Protection Diode.

(1)

A protection diode has been built in between the

gate and the source to protect against static

electricity when the product is in use.

Use the protection circuit when fixed voltages are

exceeded.

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Limits

Unit

DSS

GSS

±20

200

800

200

800

200

150

Continuous

˚C

Drain current

Pulsed

IDP

Continuous

Pulsed

Source current

Total power dissipation

Channel temperature

Storage temperature

Tch

Tstg

˚C

−55 to 150

1 Pw≤10µs, Duty cycle≤1%

2 Each terminal mounted on a recommended

1/4

12 3 4 5

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