Datasheet > RHU003N03

RHU003N03

更新时间： 2024-09-21 03:36:55

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
3页	59K
描述
4V Drive Nch MOS FET

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中文翻译

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数据手册

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RHU003N03 数据手册

RHU003N03

Transistors

4V Drive Nch MOS FET

RHU003N03

zStructure

zExternal dimensions (Unit : mm)

Silicon N-channel MOS FET

UMT3

2.0

0.9

0.7

0.2

0.3

zFeatures

( )

1) Low On-resistance.

2) 4V drive.

( )

0.650.65

1.3

0.15

(1) Source

(2) Gate

Each lead has same dimensions

Abbreviated symbol : MN

zApplications

Switching

(3) Drain

zPackaging specifications

zInner circuit

(3)

Package

Taping

T106

Type

Code

Basic ordering unit (pieces)

3000

(2)

∗2

RHU003N03

(1) Source

(2) Gate

(3) Drain

∗1

(1)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

Continuous

300

Drain current

Pulsed

∗1

I_DP

P_D

1.2

∗2

Total power dissipation

Channel temperature

200

°C

Tch

Tstg

150

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Each terminal mounted on a recommended land

−55 to +150

zThermal resistance

Parameter

Symbol

Limits

625

Unit

∗

Channel to ambient

∗ Each terminal mounted on a recommended land

Rth(ch-a)

°C/W

1/2

12 3

中文翻译

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