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RGTVX6TS65D PDF预览

RGTVX6TS65D

更新时间: 2024-11-24 11:08:19
品牌 Logo 应用领域
罗姆 - ROHM 开关双极性晶体管功率因数校正电视
页数 文件大小 规格书
12页 1203K
描述
RGTVX6TS65D是低VCE(sat)、低开关损耗的IGBT。适合PFC、太阳能变频器、UPS、焊接、IH等用途。

RGTVX6TS65D 数据手册

 浏览型号RGTVX6TS65D的Datasheet PDF文件第2页浏览型号RGTVX6TS65D的Datasheet PDF文件第3页浏览型号RGTVX6TS65D的Datasheet PDF文件第4页浏览型号RGTVX6TS65D的Datasheet PDF文件第5页浏览型号RGTVX6TS65D的Datasheet PDF文件第6页浏览型号RGTVX6TS65D的Datasheet PDF文件第7页 
RGTVX6TS65D  
650V 80A Field Stop Trench IGBT  
Datasheet  
lOutline  
TO-247N  
VCES  
IC (100°C)  
VCE(sat) (Typ.)  
PD  
650V  
80A  
1.5V  
404W  
(1)(2)(3)  
lFeatures  
lInner Circuit  
1) Low Collector - Emitter Saturation Voltage  
2) High Speed Switching & Low Switching Loss  
3) Short Circuit Withstand Time 2μs  
(2)  
(3)  
(1) Gate  
(2) Collector  
(3) Emitter  
*1  
(1)  
4) Built in Very Fast & Soft Recovery FRD  
5) Pb - free Lead Plating ; RoHS Compliant  
*1 Built in FRD  
lApplication  
lPackaging Specifications  
Solar Inverter  
Packaging  
Tube  
UPS  
Welding  
IH  
Reel Size (mm)  
-
Tape Width (mm)  
Type  
-
450  
Basic Ordering Unit (pcs)  
PFC  
Packing Code  
Marking  
C11  
RGTVX6TS65D  
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)  
Parameter  
Collector - Emitter Voltage  
Symbol  
VCES  
VGES  
IC  
Value  
Unit  
V
650  
±30  
Gate - Emitter Voltage  
V
TC = 25°C  
144  
A
Collector Current  
TC = 100°C  
IC  
80  
A
*1  
Pulsed Collector Current  
Diode Forward Current  
Diode Pulsed Forward Current  
Power Dissipation  
320  
A
ICP  
TC = 25°C  
IF  
IF  
127  
A
TC = 100°C  
80  
A
*1  
320  
A
IFP  
TC = 25°C  
PD  
PD  
Tj  
404  
W
W
°C  
°C  
TC = 100°C  
202  
Operating Junction Temperature  
Storage Temperature  
-40 to +175  
-55 to +175  
Tstg  
*1 Pulse width limited by Tjmax.  
www.rohm.com  
© 2019 ROHM Co., Ltd. All rights reserved.  
2019.01 - Rev.A  
1/11  

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