Datasheet > RGF1D

RGF1D

更新时间： 2024-01-25 22:40:43

品牌	Logo	应用领域
戈采 - FCI		二极管光电二极管
页数	文件大小	规格书
2页	142K
描述
1.0 Amp MEGARECTIFIERS

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RGF1D 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.21
Is Samacsys：	N	二极管类型：	RECTIFIER DIODE
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

RGF1D 数据手册

Data Sheet

1.0 Amp MEGARECTIFIERS

Mechanical Dimensions

Description

Features

n CAPABILITY OF MEETING

ENVIRONMENTAL STANDARDS

OF MIL-S-19500

n HIGH TEMPERATURE METALLURGI-

CALLY BONDED CONSTRUCTION

n FAST SWITCHING FOR HIGH

EFFICIENCY

Electrical Characteristics @ 25^oC.

RGF1A . . . RGF1M Series

RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M

Units

Maximum Ratings

Peak Repetitive Reverse Voltage...V_RRM

RMS Reverse Voltage...V_R(rms)

DC Blocking Voltage...V_DC

Volts

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

100

1000

............................................. 1.0 ............................................... Amps

Average Forward Rectified Current...I_F(av)

AT T_A= 120°C

............................................. 30 ...............................................

Amps

Non-Repetitive Peak Forward Surge Current...I_FSM

8.3 mS, ½ Sine Wave Superimposed on Rated Load

............................................. 1.3 ...............................................

............................................. 50 ...............................................

Volts

Forward Voltage @ 1.0A...V_F

µAmps

Full Load Reverse Current...I_R(av)

Full Cycle Average @ T_A= 55°C

DC Reverse Current...I_R

@ Rated DC Blocking Voltage

T_A

25°C

.............................................

............................................... µAmps

T_A= 125°C

............................................. 100 ............................................... µAmps

Typical Junction Capacitance...C_J(Note 1)

Typical Thermal Resistance...R_θJL(Note 2)

Typical Reverse Recovery Time...t_RR(Note 3)

............................................. 8.5 ...............................................

............................................. 28 ...............................................

°C/W

< ....................... 150 .....................>

< ..... 500 .... >

250

Operating & Storage Temperature Range...T_J, T_STRG......................................... -65 to 175 ..........................................

°C

Page 10-16

下载PDF

与RGF1D相关器件

型号	品牌	描述	获取价格	数据表
RGF1D/17	VISHAY	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214BA, PLASTIC, GF1, 2 PIN	获取价格
RGF1D/17-HE3	VISHAY	DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214BA, PLASTIC, GF1, 2 PIN, Signal Diode	获取价格
RGF1D/19-HE3	VISHAY	DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214BA, PLASTIC, GF1, 2 PIN, Signal Diode	获取价格
RGF1D-E3	VISHAY	DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214BA, LEAD FREE, PLASTIC, GF1, 2 PIN, Signal	获取价格
RGF1D-E3/5CA	VISHAY	1A,200V,150NS,FS. SUPERECT,SMD	获取价格
RGF1D-E3/67A	VISHAY	DIODE GEN PURP 200V 1A DO214BA	获取价格