Datasheet > RFVS8TG6S_16

RFVS8TG6S_16

更新时间： 2024-02-10 19:37:58

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
8页	969K
描述
RFVS8TG6S

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中文翻译

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数据手册

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RFVS8TG6S_16 数据手册

Super Fast Recovery Diode

Datasheet

RFVS8TG6S

Series

Dimensions (Unit : mm)

Structure

4.5±0.1

3.8±0.06

Standard Fast Recovery

10.2±0.2

1.28±0.06

Application

General rectification

RFVS8

TG6S

Cathode

Anode

For PFC

(CCM : Continuous Current Mode)

Features

2.6±0.1

Hyper fast recovery / Hard recovery type

1.4±0.2

2) Ultra low switching loss

3) High current overload capacity

0.6±0.1

0.06

0.10

2.54±0.1

0.83±

Construction

5.08±0.1

Silicon epitaxial planar type

ROHM : TO-220AC

: Manufacture year, week,day, package code

: Serial number

Absolute Maximum Ratings (T_a= 25°C)

Parameter

Repetitive peak reverse voltage

Reverse voltage

Symbol

Conditions

Duty≦0.5

Limits

Unit

V_RM

V_R

I_o

600

Direct reverse voltage

60Hz half sin wave , resistive load

Average current

60Hz half sin wave, one cycle, non-repetitive at T_j=25°C

Non-repetitive forward surge current I_FSM

T_j

150

Operating junction temperature

Storage temperature

°C

T_stg

55 to 150 °C

Electrical Characteristics (T_j= 25°C)

Parameter

Conditions

Symbol

V_F

Min. Typ. Max. Unit

T_j=25°C

T_j=125°C

T_j=25°C

T_j=125°C

1.6

2.5

1.8

3.0

I_F=8A

Forward voltage

0.03 10

A

I_R

V_R=600V

Reverse current

5.0

145

110

4.5

200

I_F=0.5A, I_R=1A, Irr=0.25×I_R

Reverse recovery time

trr

I_F=8A, V_R=400V, dI_F/dt=200A/s

I_F=8A, V_R=400V

T_j=125°C

I_Rp

Qrr

Reverse recovery current

Reverse recovery charges

Forward recovery time

dI_F/dt=200A/s

I_F=8A, dI_F/dt=100A/s,

V_FR=1.1xV_Fmax

tfr

V_Fp

Forward recovery voltage

R_th(j-a)

R_th(j-c)

Junction to ambient

Junction to case

3.0 °C/W

1.8 °C/W

Thermal resistance

www.rohm.com

2016.07 - Rev.B

1/5

12 3 4 5 6 7 8

中文翻译

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