Datasheet > RFW0836-10

RFW0836-10

更新时间： 2024-02-24 18:48:00

品牌	Logo	应用领域
RFHIC		放大器功率放大器
页数	文件大小	规格书
3页	155K
描述
Power Amplifier

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RFW0836-10 数据手册

Power Amplifier

RFW0836-10

Product Features

Application

• Cellular Repeater

• RF Sub-Systems

• Base Station

• Small size by using simple matching circuit board

• Single Supply Voltage

• Heat sink 99.9% copper, gold plated

• High Productivity

• Low Manufacturing Cost

• GaAs HFET

Package : DP-56

Description

The power amplifier module is designed for base stations and cell extenders and

operating frequency range is from 300MHz to 2.3GHz

GaAs HFET is used and attached on a copper sub carrier. It is connected by

using bias and in/out matching circuit method with gold wire bonding.

The bias and matching circuit are designed much simpler than other circuits for silicon IC’s, LDMOS because

GaAs HFET is operated by low supply voltage whereas others are operated by high supply voltage.

For better thermal conductivity, enhanced mode PCB was used in the 99.9% copper gold plate heat sink.

This simplicity results cost competitiveness and performance enhancement.

Specifications

PARAMETER

Min

Typ

Max

Frequency Range (MHz)

Small Signal Gain (dB)

Gain Flatness (Max.)

Gain Variation Over Temp

Output Return Loss

Output P1dB

824 ~ 849

± 0.5dB @ 50MHz BW

± 0.7dB

± 1.5dB

-15dB

37 dBm

50 dBm

38 dBm

CDMA Power (1 FA)

OIP3 @ tone / 27 dBm

Noise Figure

32dBm @ -45dBc ACPR

51 dBm

4 dB

Drain Voltage

10V

Drain Current

Dimensions in mm

1.5A

Functional Diagram

Operating Temp Range

Dimensions (W×L×H)

-20°C ~ +70°C

32.0 × 44 × 10.1 [mm]

NOTE

* CDMA : 1.23MHz symbol rate ; Forward Link ; 9 Channels, Multi tone Available

@ ±750KHz and ±1.98MHz offset in 30KHz resolution bandwidth

* RFW Series : Internally Matched Module

▪ Tel : 82-31-250-5011

▪ rfsales@rfhic.com

▪ All specifications may change without notice.

▪ Version 1.2

12 3

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