Super Fast Recovery Diode
Datasheet
RFUH20TJ6SFHG
AEC-Q101 Qualified
Series
Dimensions (Unit : mm)
Structure
4.5±0.1
2.6±0.1
3.1±0.1
Standard Fast Recovery
10.2±0.2
Application
General rectification
Cathode
Anode
RFUH20
TJ6S
1
2
Features
2.6±0.1
Super fast recovery / Soft recovery type
1)
1.4±0.2
2) Ultra low switching loss
3) High current overload capacity
0.6±0.1
2.54±0.1
5.08±0.1
ROHM : TO220ACFP
0.83±0.1
Construction
Silicon epitaxial planar type
1
: Manufacture year, week,day, package code
: Serial number
2
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Symbol
Conditions
Limits
Unit
V
VRM
VR
Io
Duty≦0.5
Direct reverse voltage
60Hz half sin wave , resistive load
600
600
20
V
Tc=30°C
Average current
A
60Hz half sin wave, one cycle, non-repetitive at Tj=25°C
Non-repetitive forward surge current IFSM
120
150
A
Tj
-
-
Operating junction temperature
Storage temperature
°C
Tstg
55 to 150 °C
Electrical Characteristics (Tj = 25°C)
Parameter
Conditions
Symbol
VF
Min. Typ. Max. Unit
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1.4
1.9
1.5
0.1
15
18
40
5.7
340
220
4.1
-
2.8
-
V
V
IF=20A
Forward voltage
-
-
-
-
-
-
-
-
-
-
-
10
200
35
80
-
A
A
ns
ns
A
IR
VR=600V
Reverse current
IF=0.5A, IR=1A, Irr=0.25×IR
Reverse recovery time
trr
IF=20A, VR=400V, dIF/dt=200A/s
IF=20A, VR=400V
Tj=125°C
IRp
Qrr
Reverse recovery current
Reverse recovery charges
Forward recovery time
dIF/dt=200A/s
-
nC
ns
V
IF=20A, dIF/dt=200A/s,
VFR=1.1xVFmax
tfr
-
VFp
Forward recovery voltage
-
Rth(j-a)
Rth(j-c)
Junction to ambient
Junction to case
7.5 °C/W
2.5 °C/W
Thermal resistance
-
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2017.11 - Rev.A
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