Data Sheet
Super Fast Recovery Diode
RFUH10NS6S
ꢀSerise
ꢀDimensions(Unit : mm)
ꢀLand Size Figure(Unit : mm)
Super Fast Recovery
ꢀApplications
RFUH10
NS6S
General rectification
ձꢀ
ꢀFeatures
LPDS
1)Ultra low switching loss
2)High current overload capacity
ꢀ
Structure
ROHM : LPDS
JEITA : TO263S
ձꢀ
ꢀConstruction
Manufacture Date
Silicon epitaxial planer type
ꢀTaping Dimensions(Unit : mm)
ꢀAbsolute Maximum Ratings(Tc=25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Conditions
Duty䍺0.5
Limits
Symbol
VRM
Unit
V
600
600
VR
Direct voltage
V
Average rectified foward current
Forward current surge peak
Junction temperature
60Hz half sin wave , Resistive load
60Hz half sin wave , Non-repetitive at Tj=25°C (*1)
Tc=64°C
10
Io
IFSM
Tj
A
60
A
150
°C
°C
Storage temperature
ꢀ55 to ꢁ150
Tstg
(*1) 1-3pin common circuit
ꢀElectrical Characteristics(Tj=25°C)
Parameter
Conditions
IF=10A
Min.
䠉
Typ.
1.8
0.05
15
Max.
2.8
10
Symbol
VF
Unit
V
Forward voltage
VR=600V
IR
䠉
Reverse current
μA
IF=0.5A,IR=1A,Irr=0.25×IR
Junction to case
䠉
25
Reverse recovery time
Thermal resistance
trr
ns
䠉
䠉
3.0
Rth(j-c)
°C/W
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2012.06 - Rev.A