Super Fast Recovery Diode
Datasheet
RFUH10TB4SNZ
Series
Dimensions (Unit : mm)
Structure
0.3
Standard Fast Recovery
4.5±
0.1
0.3
0.1
10.0±
0.2
0.1
2.8±
φ3.2±0.2
Applications
(1)
Cathode
(2)
Anode
General rectification
①
Features
1.2
2.6±0.5
1) Ultra low switching loss
1.3
0.8
High current overload capacity
2)
(1)
(3)
0.75±0.1
0.05
2.54±0.5 2.54±0.5
ROHM : TO-220FN
: Manufacture Date
①
Construction
Packing (Unit : mm)
7
540
Silicon epitaxial planar type
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Duty≦0.5
Limits
430
Unit
VRM
VR
Io
Repetitive peak reverse voltage
Reverse voltage
V
V
Direct reverse voltage
430
10
Tc=89°C
60Hz half sin wave, resistive load,
Average current
A
60Hz half sin wave,one cycle
non-repetitive at Tj=25°C
IFSM
Tj
Non-repetitive forward surge current
Operating junction temperature
Storage temperature
80
A
-
-
150
°C
Tstg
55 to 150 °C
Electrical Characteristics (Tj= 25°C)
Parameter
Forward voltage
Conditions
IF=10A
Symbol
VF
Min. Typ. Max. Unit
-
-
-
-
1.4
-
1.7
10
25
V
VR=430V
IR
Reverse current
μA
ns
IF=0.5A, IR=1A, Irr=0.25×IR
Junction to case
Reverse recovery time
Thermal resistance
trr
15
-
Rth(j-c)
3.0 °C/W
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2018.12 - Rev.B
1/4