Datasheet > RFT3055

RFT3055

更新时间： 2024-02-09 18:55:42

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
10页	99K
描述
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET

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技术参数
数据手册

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RFT3055 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.37	其他特性：	MEGAFET
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V	最大漏极电流 (ID)：	2 A
最大漏源导通电阻：	0.15 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G4	元件数量：	1
端子数量：	4	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

RFT3055 数据手册

RFT3055LE

Data Sheet

August 1999

File Number 4537.3

2.0A, 60V, 0.150 Ohm, N-Channel, Logic

Level, ESD Rated, Power MOSFET

Features

• 2.0A, 60V

• r = 0.150Ω

This product is an N-Channel power MOSFET manufactured

using the MegaFET process. This process, which uses

feature sizes approaching those of LSI circuits, gives

optimum utilization of silicon, resulting in outstanding

performance. It was designed for use in applications such as

switching regulators, switching converters, motor drivers,

and relay drivers. These transistors can be operated directly

from integrated circuits.

DS(ON)

• 2kV ESD Protected

• Temperature Compensating PSPICE Model

• Thermal Impedance SPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Formerly developmental type TA49158.

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

PART NUMBER

PACKAGE

BRAND

Symbol

RFT3055LE

SOT-223

3055L

NOTE: RFT3055LE is available only in tape and reel.

Packaging

SOT-223

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

8-143

12 3 4 5 6 7...10

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