Super Fast Recovery Diode
RFU02VSM8S
Data Sheet
lSerise
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
0.17
+0.10
-0.05
Standard Fast Recovery
1.40±0.10
1.1
lApplication
High frequency rectification
0~0.10
TUMD2SM
lFeatures
Cathode
1) Small mold type (TUMD2SM)
lStructure
0.80±0.05
+0.20
-0.10
2) High speed switching
0.60
ROHM : TUMD2SM
dot (year week factory) + day
Anode
lConstruction
lTaping Dimensions (Unit : mm)
Silicon epitaxial planar type
lAbsolute maximum ratings (Tl= 25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Symbol
Conditions
Duty≦0.5
Limits
800
800
0.2
Unit
V
VRM
VR
Io
Direct voltage
On glass epoxy substrate
60Hz half sin wave , Resistive load
V
Tl=125°C
Average current
A
60Hz half sin wave ,Non-repetitive at Tj=25°C
Non-repetitive forward surge current IFSM
1
A
Tj
-
-
150
Operating junction temperature
°C
Tstg
Storage temperature
-55 to +150 °C
lElectrical characteristics (Tj = 25°C)
Parameter
Forward voltage
Conditions
IF=0.2A
Symbol
Min. Typ. Max. Unit
VF
IR
-
-
-
-
-
2.2
3.0
V
VR=800V
Reverse current
0.01 10
mA
ns
ns
pF
IF=0.1A, IR=0.1A, Irr=0.1×IR
IF=0.1A, IR=0.2A, Irr=0.1×IR
VR=0V, f=1MHz
Reverse recovery time
Reverse recovery time
Thermal capacitance
trr
trr
Ct
20
13
4
35
25
-
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2014.09 - Rev.A
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