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RFM7N35 PDF预览

RFM7N35

更新时间: 2024-11-15 22:24:07
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
4页 51K
描述
7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs

RFM7N35 数据手册

 浏览型号RFM7N35的Datasheet PDF文件第2页浏览型号RFM7N35的Datasheet PDF文件第3页浏览型号RFM7N35的Datasheet PDF文件第4页 
RFM7N35, RFM7N40,  
RFP7N35, RFP7N40  
Semiconductor  
7A, 350V and 400V, 0.75 Ohm,  
N-Channel Power MOSFETs  
July 1998  
Features  
Description  
• 7A, 350V and 400V  
• r = 0.75  
These are N-Channel enhancement mode silicon gate  
power field effect transistors designed for applications such  
as switching regulators, switching converters, motor drivers,  
relay drivers and drivers for high power bipolar switching  
transistors requiring high speed and low gate drive power.  
These types can be operated directly from integrated  
circuits.  
DS(ON)  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
Formerly developmental type TA17424.  
• Majority Carrier Device  
• Related Literature  
Symbol  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
D
Ordering Information  
G
PART NUMBER  
RFM7N35  
PACKAGE  
TO-204AA  
BRAND  
RFM7N35  
S
RFM7N40  
TO-204AA  
TO-220AB  
TO-220AB  
RFM7N40  
RFP7N35  
RFP7N40  
RFP7N35  
RFP7N40  
NOTE: When ordering, use the entire part number.  
Packaging  
JEDEC TO-204AA  
JEDEC TO-220AB  
DRAIN  
(FLANGE)  
SOURCE  
DRAIN  
DRAIN  
(TAB)  
GATE  
SOURCE (PIN 2)  
GATE (PIN 1)  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.  
File Number 1536.2  
Copyright © Harris Corporation 1998  
5-1  

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