Datasheet > RFM110W-315S1

RFM110W-315S1

更新时间： 2022-02-26 11:23:08

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描述
Low-Cost Consumer Electronics Applications

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数据手册

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RFM110W-315S1 数据手册

RFM110W/RFM117W

1. Electrical Characteristics

V_DD= 3.3 V, T_OP= 25 ℃, F_RF= 433.92 MHz, output power is +10 dBm terminated in a matched 50 Ω impedance, unless

otherwise noted.

1.1 Recommended Operating Conditions

Table 3. Recommended Operation Conditions

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Operation Voltage Supply

Operation Temperature

Supply Voltage Slew Rate

V_DD

T_OP

1.8

-40

3.6

℃

mV/us

1.2 Absolute Maximum Ratings

Table 4. Absolute Maximum Ratings^[1]

Conditions

Min

Parameter

Supply Voltage

Symbol

Max

Unit

-0.3

-40

-50

V_DD

V_IN

3.6

Interface Voltage

V_DD+ 0.3

℃

Junction Temperature

Storage Temperature

Soldering Temperature

ESD Rating

T_J

125

150

255

℃

T_STG

T_SDR

Lasts at least 30 seconds

Human Body Model (HBM)

-2

@ 85 ℃

Latch-up Current

-100

100

Note:

[1]. Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device. This is a stress

rating only and functional operation of the device under these conditions is not implied. Exposure to maximum rating

conditions for extended periods may affect device reliability.

Caution! ESD sensitive device. Precaution should be used when handling the device in order

to prevent permanent damage.

4/21

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