Datasheet > RDBSW410

RDBSW410

更新时间： 2024-11-19 14:55:15

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
3页	307K
描述
桥式整流管

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中文翻译

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数据手册

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RDBSW410 数据手册

RDBSW410

Fast Recovery Bridge Rectifiers

Reverse Voltage - 1000 V

Forward Current - 4 A

Features

• Glass passivated chip junction

• The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

• Fast switching for high efficiency

• Low reverse leakage

DBSW Plastic Package

• High forward surge current capability

Equivalent

• High temperature soldering guaranteed: 260℃/10 seconds.

Mechanical Data

• Case: DBSW molded plastic body

• Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026

• Mounting Position: Any

Absolute Maximum Ratings (Ta = 25℃ unless otherwise specified)

Symbol

Value

RDBSW410

1000

Unit

Parameter

Marking

Repetitive Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

700

Maximum DC Blocking Voltage

1000

Maximum Average Forward Rectified Current

at T_c= 80℃

I_F(AV)

I_FSM

T_a= 25℃

120

100

Peak Forward Surge Current 8.3 ms

Peak Forward Surge Current 1 ms

T_a= 125℃

T_a= 25℃

T_a= 125℃

210

150

Rating for Fusing 8.3 ms

I²t

T_rr

A²S

Maximum Reverse Recovery Time ¹⁾

Typical Junction Capacitance ²⁾

500

C_j

Typical Thermal Resistance form Junction to Case ³⁾

Typical Thermal Resistance form Junction to Ambient ³⁾

Operating Junction and Storage Temperature Range

R_θJC

R_θJA

T_j,T_stg

℃/W

℃

- 55 to + 150

¹⁾Reverse recovery condition I_F= 0.5 A, I_R= 1.0 A, Irr = 0.25 A.

²⁾Measured at 1MHz and applied reverse voltage of 4.0 V D.C.

³⁾Thermal resistance form junction to ambient and junction to case mounted on P.C.B. with 0.2 × 0.2''(5 × 5 mm) copper pads.

Characteristics Ta = 25℃ unless otherwise specified

Parameter

Symbol

V_F

Max.

1.1

Unit

Forward Voltage

at I_F= 4 A

Maximum DC Reverse Current

at Rated DC Blocking Voltage

T_a= 25°Ϲ

T_a= 100°Ϲ

100

I_R

µA

1 / 3

Dated: 24/04/2020 SS Rev:01

12 3

中文翻译

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