Datasheet > RD6.2MB3-AT

RD6.2MB3-AT

更新时间： 2024-11-21 14:25:35

品牌	Logo	应用领域
瑞萨 - RENESAS		测试二极管
页数	文件大小	规格书
8页	134K
描述
ZENER DIODE,SINGLE, TWO TERMINAL,6.39V V(Z),2%,SC-59

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技术参数
数据手册

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RD6.2MB3-AT 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.84
配置：	SINGLE	二极管类型：	ZENER DIODE
最大动态阻抗：	50 Ω	元件数量：	1
最高工作温度：	150 °C	最大功率耗散：	0.2 W
标称参考电压：	6.39 V	子类别：	Voltage Reference Diodes
表面贴装：	YES	最大电压容差：	2%
工作测试电流：	5 mA	Base Number Matches：	1

RD6.2MB3-AT 数据手册

DATA SHEET

ZENER DIODES

RD2.0M to RD47M

ZENER DIODES

200 mW 3-PIN MINI MOLD

<R>

DESCRIPTION

PACKAGE DIMENSIONS (Unit: mm)

Type RD2.0M to RD47M Series are planar type zener diodes

processing an allowable power dissipation of 200 mW.

2.8 ꢀ.2

+ꢀ.1

–ꢀ.15

ꢀ.65

1.5

FEATURES

• Planar process

• V^Z; Applied E24 standard.

APPLICATIONS

Circuits for,

Marking

Constant Voltage, Constant Current,

Waveform clipper, Surge absorber, etc.

<R>

MAXIMUM RATINGS (TA = 25°C)

Power Dissipation

Forward Current

I^F

200

100

150

°C

Junction Temperature

Storage Temperature

Peak Reverse Power

T^j

1 . NC

Tstg

P^RSM

−55 to +150 °C

100 W (tT = 10 μs)

2 . Anode : A SC-59 (JEITA)

3 . Cathode: K

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D14716EJ7V0DS00 (7th edition)

Date Published March 2006 NS CP(K)

Printed in Japan

1995

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7 8

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