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RD151TS3316ARPH0 PDF预览

RD151TS3316ARPH0

更新时间: 2024-02-01 01:19:43
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体时钟发生器微控制器和处理器外围集成电路光电二极管
页数 文件大小 规格书
9页 93K
描述
Spread Spectrum Clock for EMI Solution

RD151TS3316ARPH0 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.52
JESD-30 代码:R-PDSO-G8长度:4.9 mm
端子数量:8最高工作温度:85 °C
最低工作温度:-20 °C最大输出时钟频率:80 MHz
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V主时钟/晶体标称频率:80 MHz
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:Clock Generators最大压摆率:24 mA
最大供电电压:3.6 V最小供电电压:3 V
标称供电电压:3.3 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.95 mmuPs/uCs/外围集成电路类型:CLOCK GENERATOR, OTHER
Base Number Matches:1

RD151TS3316ARPH0 数据手册

 浏览型号RD151TS3316ARPH0的Datasheet PDF文件第2页浏览型号RD151TS3316ARPH0的Datasheet PDF文件第3页浏览型号RD151TS3316ARPH0的Datasheet PDF文件第4页浏览型号RD151TS3316ARPH0的Datasheet PDF文件第5页浏览型号RD151TS3316ARPH0的Datasheet PDF文件第6页浏览型号RD151TS3316ARPH0的Datasheet PDF文件第7页 
RD151TS3316ARP, RD151TS3326ARP  
Spread Spectrum Clock for EMI Solution  
REJ03D0797-0100  
Rev.1.00  
May 11, 2006  
Description  
RD151TS3316ARP and RD151TS3326ARP is a high-performance Spread Spectrum Clock generator. It is suitable for  
EMI solution of electric systems.  
Features  
Supports 40 MHz to 80 MHz operations. Multiple rate (XIN: SSCOUT) = 1: 1  
Input frequency 40 MHz to 80 MHz  
Spread spectrum modulation ; RD151TS3316ARP : ±1.5%, ±0.5% (Central spread modulation)  
RD151TS3326ARP : –3.0%, –1.0% (Down spread modulation)  
Key Specifications  
Supply voltages: VDD = 3.3 V ±0.3 V  
Cycle to cycle jitter = ±100 ps typ.  
Clock output duty cycle = 50 ±5%  
Output slew rate = 0.7 V/ns typ.  
Ordering Information  
Package Code  
(Previous Code)  
Package  
Abbreviation  
Taping Abbreviation  
(Quantity)  
Part Name  
Package Type  
RD151TS3316ARPH0  
RD151TS3326ARPH0  
SOP-8 pin  
(JEDEC)  
PRSP0008DD-C  
(FP-8DCV)  
RP  
H (2,500 pcs / Reel)  
Block Diagram  
VDD  
GND  
NC  
XIN  
1/M  
OSC  
R = 1 M  
Synthesizer  
1/N  
SSCOUT  
XOUT  
SSC Modulator  
Mode Control  
SEL  
SSN  
R = 350 kΩ  
R = 350 kΩ  
Rev.1.00 May 11, 2006 page 1 of 8  

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