Datasheet > RD110FFJ180K2S

RD110FFJ180K2S

更新时间： 2024-04-09 19:00:16

品牌	Logo	应用领域
斯达半导体 - STARPOWER		/
页数	文件大小	规格书
4页	250K
描述
K2.0.3 Phase Bridge

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RD110FFJ180K2S 数据手册

RD110FFJ180K2S

Diode Module

Absolute Maximum Ratings T_C=25℃ unless otherwise noted

Symbol

V_RRM

V_RSM

I_FAV

Description

Repetitive Peak Reverse Voltage

Non-repetitive Peak Reverse Voltage

Average Forward Current T_C=100℃

RD110FFJ180K2S

Unit

1800

1900

110

Surge Forward Current V_R=0V,t_p=10ms,T_j=45℃

V_R=0V,t_p=8.3ms,T_j=45℃

I²t-value V_R=0V,t_p=10ms,T_j=45℃

V_R=0V,t_p=8.3ms,T_j=45℃

1800

1850

I_FSM

I²t

16200

14260

A²s

P_D

T_j

T_STG

V_ISO

Maximum Power Dissipation @ T_j=150℃

Junction Temperature

Storage Temperature Range

Isolation Voltage RMS,f=50Hz,t=1min

Terminal Connection Torque, Screw M6

Mounting Torque, Screw M6

291

-40 to +150

-40 to +125

4000

2.5 to 5.0

3.0 to 5.0

℃

N.m

Electrical Characteristics of Diode T_C=25℃ unless otherwise noted

Symbol

Parameter

Diode Forward

Voltage

Test Conditions

Min. Typ. Max. Unit

T_j=25℃

1.09

1.01

V_F

I_F=200A

T_j=150℃

T_j=25℃

T_j=150℃

0.10

Diode Reverse

Current

I_R

V_R=V_RRM

3.00

Thermal Characteristics

Symbol

R_θJC

R_θCS

Parameter

Junction-to-Case (per Diode)

Case-to-Sink (Conductive grease applied)

Weight of Module

Typ.

Max.

0.429

Units

K/W

0.03

270

Weight

12/17/2014

2/4

Preliminary

123 4

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