Datasheet > RC28F640P30BF65B

RC28F640P30BF65B

更新时间： 2025-08-01 15:17:39

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
90页	1188K
描述
64Mb, 128Mb, 65nm, Single Bit Per Cell, Parallel NOR Flash

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RC28F640P30BF65B 数据手册

Numonyx^®Axcell™ P30-65nm Flash Memory

128-Mbit, 64-Mbit Single Bit per Cell (SBC)

Datasheet

Product Features

High Performance:

Enhanced Security:

— 65ns initial access time for Easy BGA and

QUAD+

— Absolute write protection: VPP = Vss

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down capability

— Password Access feature

— 75ns initial access time for TSOP

— 25ns 8-word asynchronous-page read mode

— 52MHz with zero WAIT states, 17ns clock-to-

data output synchronous-burst read mode

— One-Time Programmable Register:

— 4-, 8-, 16- and continuous-word options for

burst mode

— 64 OTP bits, programmed with unique

information by Numonyx

— 1.8V Low Power buffered programming at

1.8MByte/s (Typ) using 256-word buffer

— 2112 OTP bits, available for customer

programming

— Buffered Enhanced Factory Programming at

3.2MByte/s (typ) using 256-word buffer

Software:

— 20µs (Typ) program suspend

Architecture:

— 20µs (Typ) erase suspend

— Asymmetrically-blocked architecture

— Basic Command Set and Extended Function

Interface (EFI) Command Set compatible

— Four 32-KByte parameter blocks: top or

bottom configuration

— Common Flash Interface capable

— 128-KByte array blocks

Density and Packaging:

— Blank Check to verify an erased block

— 56-Lead TSOP (128-Mbit, 64-Mbit)

— 64-Ball Easy BGA (128-Mbit, 64-Mbit)

— 88-Ball QUAD+ Package (128-Mbit)

— 16-bit wide data bus

Voltage and Power:

— VCC (core) voltage: 1.7V – 2.0V

— VCCQ (I/O) voltage: 1.7V – 3.6V

— Standby current: 30µA(Typ)/55µA(Max)

Quality and Reliability:

— Continuous synchronous read current: 23mA

(Typ)/28mA (Max) at 52MHz

— JESD47E Compliant

— Operating temperature: –40°C to +85°C

— Minimum 100,000 erase cycles

— 65nm process technology

Datasheet

Apr 2010

Order Number: 208033-02

12 3 4 5 6 7...90

中文翻译

下载PDF

与RC28F640P30BF65B相关器件

型号	品牌	获取价格	描述	数据表
RC28F640P30T85	INTEL	获取价格	Intel StrataFlash Embedded Memory
RC28F640P30T85	NUMONYX	获取价格	Numonyx StrataFlash Embedded Memory
RC28F640P30T85A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RC28F640P30T85B	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RC28F640P30TF65A	MICRON	获取价格	64Mb, 128Mb, 65nm, Single Bit Per Cell, Parallel NOR Flash
RC28F640P33B85A	ROCHESTER	获取价格	4MX16 FLASH 3V PROM, 85ns, PBGA64, BGA-64
RC28F640P33B85A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RC28F640P33BF60	NUMONYX	获取价格	NumonyxÂ® P33-65nm Flash Memory
RC28F640P33BF60A	MICRON	获取价格	Legacy NOR Flash
RC28F640P33T85A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory