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RBR10RSM40B (新产品) PDF预览

RBR10RSM40B (新产品)

更新时间: 2023-09-03 20:25:14
品牌 Logo 应用领域
罗姆 - ROHM 二极管
页数 文件大小 规格书
8页 1900K
描述
RBR10RSM40B是一款低VF的肖特基势垒二极管。非常适用于常规整流应用。

RBR10RSM40B (新产品) 数据手册

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RBR10RSM40B  
Schottky Barrier Diode  
Data sheet  
Outline  
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ ꢀꢀꢀꢀ  
V
40  
10  
150  
V
A
A
R
I
o
I
FSM  
ꢀ ꢀ ꢀ  
Features  
Inner Circuit  
High reliability  
Power mold type  
Low V  
F
Application  
Packaging Specifications  
Packing  
General rectification  
Embossed Tape  
Reel Size(mm)  
Taping Width(mm)  
Quantity(pcs)  
330  
12  
4000  
Structure  
Silicon epitaxial planar  
Taping Code  
TL1  
Marking  
BR10RSM40B  
(T =25ºC unless otherwise specified)  
Absolute Maximum Ratings  
c
Parameter  
Symbol  
Conditions  
Limits  
Unit  
V
V
Repetitive peak reverse voltage  
Duty0.5  
40  
RM  
V
Reverse voltage  
Reverse direct voltage  
40  
V
A
A
R
60Hzhalf sin waveformresistive load,  
I
o
Average rectified forward current  
Peak forward surge current  
10  
T =115Max.  
c
60Hzhalf sin waveform,  
I
150  
FSM  
non-repetitiveT =25℃  
a
Junction temperature(1)  
Storage temperature  
-
-
150  
T
j
T
stg  
-55 150  
Note(1) To avoid occurrence of thermal runawayactual board is to be designed to fulfill dP /dT<1/R .  
θJA  
d
j
Attention  
www.rohm.com  
©2022- ROHMCo., Ltd.All rights reserved.  
ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ ꢀ  
1/5  
2022/05/09_Rev.001  

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