RBN25H125S1FPQ-A0
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Symbol
VCES
VGES
IC
Ratings
1250
±30
Unit
V
V
Collector current
Tc = 25 °C
50
A
Tc = 100 °C
IC
25
A
Notes1
Collector peak current
Diode forward current
IC(peak)
100
A
Tc = 25 °C
IF
IF
30
A
Tc = 100 °C
15
A
Notes1
Diode forward peak current
Collector power dissipation
Junction temperature
IF(peak)
100
A
Notes2
PC
Tj
223
W
°C
°C
Notes2
175
Storage temperature
Tstg
–55 to +150
Note: Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a
reliability even if it is within the absolute maximum ratings. Please consider derating condition for appropriate
reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage
of Semiconductor Devices) and individual reliability data.
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Please use this device in the thermal conditions which the junction temperature does not exceed 175 °C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175 °C.
Thermal Resistance Characteristics
(Tc = 25°C)
Item
Symbol
Rth(j-c)
Max. Value Notes3
Unit
°C/W
°C/W
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
0.67
2.10
Rth(j-c)
Notes: 3. Designed target value on Renesas measurement condition. (Not tested)
R07DS1378EJ0141 Rev.1.41
Oct.14.2021
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