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RB495DRF PDF预览

RB495DRF

更新时间: 2024-02-15 02:47:45
品牌 Logo 应用领域
TSC 肖特基二极管光电二极管
页数 文件大小 规格书
2页 129K
描述
40V, 350mA, SMD Schottky Diode

RB495DRF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.67其他特性:HIGH RELIABILITY
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
元件数量:2端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:40 V
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

RB495DRF 数据手册

 浏览型号RB495DRF的Datasheet PDF文件第2页 
RB495D  
40V, 350mA, SMD Schottky Diode  
Small Signal Diode  
SOT23  
A
F
Features  
—Low V , Low IR, High Reliability Schottky Diode  
B
E
F
—Surface device type mounting  
G
C
—Moisture sensitivity level 1  
D
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate  
—Pb free version and RoHS compliant  
—Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code  
Unit (mm)  
Unit (inch)  
Dimensions  
Min Max Min Max  
2.65 3.05 0.104 0.120  
1.19 1.40 0.047 0.055  
0.37 0.51 0.015 0.020  
1.78 2.05 0.070 0.080  
2.10 2.50 0.083 0.098  
0.89 0.11 0.035 0.043  
0.45 0.61 0.018 0.024  
A
B
C
D
E
F
Mechanical Data  
—Case :SOT-23 small outline plastic package  
—Terminal: Matte tin plated, lead free., solderable  
per MIL-STD-202, Method 208 guaranteed  
—High temperature soldering guaranteed: 260°C/10s  
—Weight :0.008 gram (approximately)  
G
Ordering Information  
2
1
Anode  
Cathode  
3
Part No.  
Packing  
Package  
SOT23  
Anode/Cathode  
RB495D RF  
3Kpcs/7" Reel  
Electrical Symbol  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol  
Value  
200  
Units  
mW  
V
Power Dissipation  
PD  
Repetitive Peak Reverse Voltage  
Reverse Voltage  
V
RRM  
40  
25  
V
R
V
Mean Forward Current  
I
O
350  
mA  
A
Non-Repetitive Peak Forward Surge Current (Note 1)  
Junction and Storage Temperature Range  
I
FSM  
1.5  
T
J
, TSTG  
-40 to + 125  
°C  
Electrical Characteristics  
Type Number  
Symbol  
Min  
Max  
-
Units  
Reverse Breakdown Voltage  
Forward Voltage  
V
(BR)  
40  
-
V
I
I
I
R
=
100μA  
10mA  
200mA  
25V  
0.3  
0.5  
70  
50  
F
=
=
VF  
V
-
F
Reverse Leakage Current  
Junction Capacitance  
I
R
-
μA  
V
R
=
C
J
-
pF  
V
R
=0, f=1.0MHz  
Notes:1. 8.3ms singlehalf Sine-wave  
Version : A09  

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