Datasheet > RB095T-40_10

RB095T-40_10

更新时间： 2024-01-04 06:07:28

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	319K
描述
Schottky barrier diode

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中文翻译

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RB095T-40_10 数据手册

Schottky barrier diode

RB095T-40

Applications

Dimensions (Unit : mm)

Structure

Switching power supply

Features

1) Cathode common type.

(TO-220)

(1) (2) (3)

2) Low I_R

3) High reliability

Construction

Silicon epitaxial planer

Absolute maximum ratings (Ta=25°C)

Parameter

Limits

Symbol

V_RM

V_R

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current (*1)

Forward current surge peak (60Hz / 1cyc) (*1)

Junction temperature

100

I_FSM

150

C

Storage temperature

-40 to +150

Tstg

(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=136C

Electrical characteristic (Ta=25°C)

Parameter

Conditions

Symbol

V_F

Min.

Typ.

Max.

0.55

0.1

Unit

Forward voltage

Reverse current

I_F=3A

I_R

C/W

V_R=40V

Thermal impedance

junction to case

jc

www.rohm.com

2010.02 - Rev.E

1/3

12 3 4

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