Datasheet > RB098BM100FNS

RB098BM100FNS

更新时间： 2024-03-03 10:11:15

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
9页	2059K
描述
RB098BM100FNS is a ultra low I_R schottky barrier diode, suitable for Switching power supply.

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RB098BM100FNS 数据手册

RB098BM100FNS

Schottky Barrier Diode

Data sheet

●Outline

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100

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100

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FSM

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●Features

●Inner Circuit

High reliability

Power mold type

Cathode common dual type

Ultra Low I

●Application

●Packaging Specifications

Packing

Switching power supply

Embossed Tape

Reel Size(mm)

Taping Width(mm)

Quantity(pcs)

330

2500

●Structure

Silicon epitaxial planar

Taping Code

Marking

B098BM100

(T =25ºC unless otherwise specified)

●Absolute Maximum Ratings

Parameter

Symbol

Conditions

Limits

Unit

Repetitive peak reverse voltage

Duty≦0.5

110

Reverse voltage

Reverse direct voltage

100

60Hzhalf sin waveform，resistive load，

Average rectified forward current

Peak forward surge current

Junction temperature⁽¹⁾

Storage temperature

I /2 per diode，T =170℃ Max.

60Hzhalf sin waveform，

100

FSM

non-repetitive，per diode，T =25℃

175

℃

stg

-55 ～ 175

℃

Note(1) To avoid occurrence of thermal runaway， actual board is to be designed to fulfill dP /dT<1/R .

θJA

Attention

www.rohm.com

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1/6

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2022/08/02_Rev.001

12 3 4 5 6 7...9

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