RB098BM-40FHH
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
●Outline
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ ꢀꢀꢀꢀ
ꢀ
V
40
6
V
A
A
ꢀ
R
ꢀ
ꢀ
I
o
ꢀ
ꢀ
I
50
ꢀ
FSM
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ ꢀ ꢀ
●Features
●Inner Circuit
High reliability
Power mold type
Cathode common dual type
Ultra Low I
R
●Application
●Packaging Specifications
Packing
Switching power supply
Embossed Tape
Reel Size(mm)
Taping Width(mm)
Quantity(pcs)
330
16
2500
●Structure
Silicon epitaxial planar
Taping Code
TL
Marking
B098BM40
(T =25ºC unless otherwise specified)
●Absolute Maximum Ratings
c
Parameter
Symbol
Conditions
Limits
Unit
V
V
Repetitive peak reverse voltage
Duty≦0.5
45
RM
V
Reverse voltage
Reverse direct voltage
40
V
A
R
60Hzhalf sin waveform,resistive load,
I
o
Average rectified forward current
Peak forward surge current
Junction temperature(1)
Storage temperature
6
50
I /2 per diode,T =163℃ Max.
o
c
60Hzhalf sin waveform,
I
A
FSM
non-repetitive,per diode,T =25℃
a
T
-
-
175
℃
j
T
stg
-55 ~ 175
℃
Note(1) To avoid occurrence of thermal runaway, actual board is to be designed to fulfill dP /dT<1/R .
θJA
d
j
Attention
www.rohm.com
©2018- ROHMCo., Ltd.All rights reserved.
ꢀ
ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ
1/6
ꢀ
2022/08/02_Rev.001