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RAA227063 PDF预览

RAA227063

更新时间: 2024-11-30 14:58:23
品牌 Logo 应用领域
瑞萨 - RENESAS
页数 文件大小 规格书
74页 3691K
描述
Smart 3-Phase Gate Driver

RAA227063 数据手册

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Datasheet  
RAA227063  
4.5V to 60V 3-Phase Smart Gate Driver  
The RAA227063 is a smart gate driver IC for 3-phase  
Brushless DC (BLDC) motor applications. It  
Features  
▪ Wide V range: 4.5V to 60V (65V abs max)  
IN  
integrates three half-bridge smart gate drivers that are  
capable of driving up to three N-channel MOSFET  
bridges and supports bridge voltages from 4.5V to  
60V. Each gate driver supports up to 1A source and  
2A sink peak drive current with programmable drive  
strength control. Adjustable and adaptive dead-times  
are implemented to ensure robustness and flexibility.  
The active gate holding mechanism prevents a Miller  
effect-induced cross-conduction and further  
▪ Switching frequency range up to 200kHz  
▪ 3-Phase drive for BLDC application  
• Peak 1A/2A source/sink current with  
programmable drive strength  
• Supports 8 adjustable levels of drive strength  
through hardware interface and 16 adjustable  
levels of drive strength through SPI interface  
▪ Adaptive and adjustable dead time  
enhances robustness.  
▪ Fully integrated power supply architecture  
The device integrates power supplies that power  
internal analog and logic circuitry, high-side and  
low-side drivers, and a dedicated supply for powering  
external microcontrollers. The device also features a  
low-power Sleep mode that consumes only 20µA to  
maximize battery life in portable applications.  
• Two VCC LDOs allow for Sleep mode low I  
• 500mA buck-boost switching regulator  
generates drive voltage (5V to 15V adjustable)  
• 200mA adjustable output LDO for MCU supplies  
▪ Flexible configuration  
Q
The driver control inputs can be configured to either  
3-phase LI/HI or 3-phase PWM modes. Three  
accurate differential amplifiers with adjustable gain  
are integrated to support ground-side shunt current  
• 3-phase HI/LI mode and 3-phase PWM mode  
• Support half-bridge, full-bridge configuration  
▪ Three current sense amplifiers  
• Four levels of sense gain setting  
sensing or low-side r  
current sensing for each  
DS(ON)  
• Supports DC offset calibration during power-up  
and on-the-fly  
bridge. The device can also support sensorless  
operation using back EMF in brushless DC motors.  
• Supports both ground-side shunt sense or  
The device can be configured to use either a  
hardware interface or SPI interface. For hardware  
interface configuration, key driver operating  
parameters can be set using resistor pin-straps. For  
SPI configuration, all the parameters can be set  
through the SPI Bus, which allows better monitoring.  
low-side MOSFET r  
sense  
DS(ON)  
▪ Back-EMF sensing for BLDC sensorless operation  
▪ Features both hardware interface and SPI interface  
▪ Extensive fault protection functions (VCC UV, VM/  
VBRIDGE UV, charge pump UV, MOSFET VDS  
OCP, current sense OCP, thermal  
Extensive protection functions include bridge voltage  
UV protection, buck-boost OV/UV/OC protection,  
charge pump UV protection, MOSFET drain-to-  
source voltage OC protection, current sense  
overcurrent protection, thermal warning, and  
shutdown. Fault conditions are indicated on a  
dedicated nFAULT pin and in SPI status registers.  
warning/shutdown, buck-boost current limiting,  
buck-boost OCP, buck-boost UV/OV)  
▪ Supports reverse battery protection by additional  
external circuitry  
▪ 7mmx7mm 48 Ld QFN package (0.5mm pitch)  
Applications  
▪ Power tools, fans, pumps, E-bikes  
▪ Industrial automation, robotics, drones  
R16DS0045EU0103 Rev.1.03  
Aug 5, 2022  
Page 1  
© 2021-2022 Renesas Electronics  

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