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RA60H4452M1-101 PDF预览

RA60H4452M1-101

更新时间: 2024-11-25 03:38:15
品牌 Logo 应用领域
三菱 - MITSUBISHI 放大器
页数 文件大小 规格书
9页 169K
描述
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO

RA60H4452M1-101 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FLNG,2.4"H.SPACE
Reach Compliance Code:unknown风险等级:5.82
特性阻抗:50 Ω构造:MODULE
最大输入功率 (CW):20 dBmJESD-609代码:e3
功能数量:1最大工作频率:520 MHz
最小工作频率:440 MHz最高工作温度:100 °C
最低工作温度:-30 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:FLNG,2.4"H.SPACE电源:12.5 V
射频/微波设备类型:NARROW BAND MEDIUM POWER子类别:RF/Microwave Amplifiers
最大压摆率:1 mA端子面层:Matte Tin (Sn)
最大电压驻波比:3Base Number Matches:1

RA60H4452M1-101 数据手册

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MITSUBISHI RF MOSFET MODULE  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RA60H4452M1  
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO  
DESCRIPTION  
The RA60H4452M1 is a 60-watt RF MOSFET Amplifier  
BLOCK DIAGRAM  
Module for 12.5-volt mobile radios that operate in the 440- to  
520-MHz range.  
3
2
The battery can be connected directly to the drain of the  
enhancement-mode MOSFET transistors. Without the gate  
voltage (VGG=0V), only a small leakage current flows into the  
drain and the nominal output signal (Pout=60W) attenuates up to  
60 dB. The output power and the drain current increase as the  
gate voltage increases. The output power and the drain current  
increase substantially with the gate voltage around 0V(minimum).  
The nominal output power becomes available at the state that  
VGG is 4V (typical) and 5V (maximum).  
At VGG=5V, the typical gate currents are 5mA.This module is  
designed for non-linear FM modulation, but may also be used for  
linear modulation by setting the drain quiescent current with the  
gate voltage and controlling the output power with the input  
power.  
1
4
5
1
RF Input (Pin)  
FEATURES  
2
3
4
5
Gate Voltage (VGG), Power Control  
Drain Voltage (VDD), Battery  
• Enhancement-Mode MOSFET Transistors  
(IDD0 @ VDD=12.5V, VGG=0V)  
RF Output (Pout  
)
• Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW  
• Broadband Frequency Range: 440-520MHz  
RF Ground (Case)  
• Metal shield structure that makes the improvements of spurious  
radiation simple  
PACKAGE CODE: H2M  
• Low-Power Control Current IGG=5mA (typ) @ VGG=5V  
• Module Size: 67 x 18 x 9.9 mm  
• Linear operation is possible by setting the quiescent drain  
current with the gate voltages and controlling the output power  
with the input power.  
RoHS COMPLIANCE  
• RA60H4452M1 is a RoHS compliant product.  
• RoHS compliance is indicate by the letter “G” after the Lot Marking.  
• This product include the lead in the Glass of electronic parts and the  
lead in electronic Ceramic parts.  
However, it is applicable to the following exceptions of RoHS Directions.  
1.Lead in the Glass of a cathode-ray tube, electronic parts, and  
fluorescent tubes.  
2.Lead in electronic Ceramic parts.  
ORDERING INFORMATION:  
ORDER NUMBER  
RA60H4452M1-101  
SUPPLY FORM  
Antistatic tray,  
10 modules/tray  
RA60H4452M1  
25th Oct 2006  
MITSUBISHI ELECTRIC  
1/9  

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