Datasheet > RA506GPP

RA506GPP

更新时间： 2024-11-20 19:05:23

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	218K
描述
DIODE 50 A, 800 V, SILICON, RECTIFIER DIODE, PLASTIC, RA, 2 PIN, Rectifier Diode

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中文翻译

获取价格

技术参数
数据手册

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RA506GPP 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	PLASTIC, RA, 2 PIN
针数：	2	Reach Compliance Code：	unknown
风险等级：	5.76	Base Number Matches：	1

RA506GPP 数据手册

RA501GP

THRU

RA507GP

M C C

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20736 Marilla Street Chatsworth

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Micro Commercial Components

Features

50.0 Amp

Plastic Material Used Carriers Underwrites Laboratory

High Current Glass

Passivated Rectifier

50 to 1000 Volts

Classification 94V-O

Low Cost Construction Utilizing Void-free Molded Plastic

Technique

High Surge Capability, Glass Passivated Chip

Diffused Junction

Maximum Ratings

Operating & Storage Temperature: -55^oC to +175^oC

For Capacitive Load, Derate Current by 20%

Maximum

Recurrent

Peak

Reverse

MCC Part

Number

Maximum

RMS Voltage Blocking

Voltage

50V

100V

200V

400V

RA501GP

RA502GP

RA503GP

RA504GP

35V

70V

140V

280V

50V

100V

200V

400V

RA505GP

RA506GP

RA507GP

600V

800V

420V

560V

700V

600V

800V

1000V

Electrical Characteristics @ 25^oC Unless Otherwise Specified

Average Forward

I_F(AV)

50.0A

500A

T_C=135^oC

Current

Peak Forward Surge

Current

8.3ms half

sine

I_FSM

Maximum

Instantaneous

Forward Voltage

DIMENSION

DIM INCHES MM

I_FM=50.0A

T_A=25^oC

V_F

1.1V

NOTE

MIN MAX MIN MAX

.380 .410 9.70 10.40

.165 .185 4.19 4.70

.215 .225 5.50 5.70

.235 .250 6.00 6.40

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

I_R

5.0uA

T_C=25^oC

I_F=0.5A,

I_R=1.0A,

I_rr=0.25A

Typical Reverse

Recovery Times

-----

5^o

-----

5^oNOM

t_rr

3.0us

Measured at

1.0MHz,

V_R=4.0V

Typical Junction

Capacitance

C_j

300pF

www.mccsemi.com

Revision: 4

2004/04/02

中文翻译

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