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RA104S

更新时间： 2024-11-27 23:31:59
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
4页 104K
描述
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR

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RA104S 数据手册

 浏览型号RA104S的Datasheet PDF文件第2页浏览型号RA104S的Datasheet PDF文件第3页浏览型号RA104S的Datasheet PDF文件第4页 
Ordering number:EN4762  
PNP/NPN Epitaxial Planar Silicon Transistors  
RA104S/RC104S  
Switching Applications  
(with Bias Resistances)  
Applications  
Package Dimensions  
unit:mm  
· Switching circuits, inverter circuits, interface circuits,  
driver circuits.  
2033A  
[RA104S/RC104S]  
2.2  
4.0  
Features  
· On-chip bias resistances (R1=10kΩ, R2=47kΩ).  
· Compact package (SPA).  
0.4  
0.5  
0.4  
0.4  
1
2
3
1 : Emitter  
2 : Collector  
3 : Base  
1.3  
1.3  
( ) : RA104S  
3.0  
3.8  
SANYO : SPA  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
(–)50  
(–)50  
V
V
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Input Voltage  
V
CEO  
V
(–)6  
V
EBO  
V
(–)30  
V
IN  
Collector Current  
I
(–)100  
(–)200  
300  
mA  
mA  
mW  
˚C  
˚C  
C
Collector Current (Pulse)  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
I
CP  
P
C
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
Unit  
min  
max  
I
I
V
V
V
V
V
=(–)40V, I =0  
E
=(–)40V, I =0  
B
(–)0.1  
(–)0.5  
µA  
µA  
µA  
CBO  
CEO  
CB  
CE  
EB  
CE  
CE  
Emitter Cutoff Current  
DC Current Gain  
I
=(–)5V, I =0  
(–)67  
70  
(–)88 (–)125  
EBO  
C
h
=(–)5V, I =(–)5mA  
C
=(–)10V, I =(–)5mA  
C
FE  
Gain-Bandwidth Product  
f
250  
(200)  
3.5  
MHz  
MHz  
pF  
T
Output Capacitance  
Cob  
V
=(–)10V, f=1MHz  
CB  
(5.3)  
pF  
Marking : RA104S : A104, RC104S : C104  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
31599TH (KT)/53094TH (KOTO) A8-9756 No.4762–1/4  
1234

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