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R8001CND3FRA
Datasheet
Unit
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Input capacitance
Symbol
Conditions
= 0V
Min. Typ. Max.
Ciss
Coss
Crss
V
V
-
-
-
-
-
-
-
60
70
9
-
-
-
-
-
-
-
GS
= 25V
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
pF
ns
DS
f = 1MHz
⋍ 400V, V = 10V
*6
td(on)
V
DD
20
21
33
137
GS
tr*6
I = 0.5A
D
*6
td(off)
R ⋍ 800Ω
Turn - off delay time
Fall time
L
tf*6
R = 10Ω
G
llGate charge characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
⋍ 400V
Unit
Min. Typ. Max.
*6
Qg
Total gate charge
V
-
-
-
-
7.2
2.4
3.9
8.2
-
-
-
-
DD
*6
Qgs
I = 1.0A
D
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
nC
V
*6
Qgd
V
GS
DD
= 10V
V(plateau)
V
⋍ 400V, I = 1.0A
D
*1 Limited only by maximum temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L ⋍ 500μH, V = 50V, R = 25Ω, starting T = 25°C Fig.3-1,3-2
DD
G
j
*4 T =25℃
c
*5 Mounted on an epoxy PCB FR4 (20×20×0.8mm)
*6 Pulsed
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20191118 - Rev.002