Datasheet > R7056

R7056

更新时间： 2024-11-14 22:44:03

品牌	Logo	应用领域
HAMAMATSU		光电
页数	文件大小	规格书
4页	67K
描述
PHOTOMULTIPLIER TUBES

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中文翻译

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R7056 数据手册

PHOTOMULTIPLIER TUBES

R6427, R7056

Fast time response, For scintillation counting and

high energy physics, R6427: Borosilicate glass, R7056: UV glass

GENERAL

Parameter

R6427

R7056

Unit

—

Spectral Response

300 to 650

185 to 650

Wavelength of Maximum Response

420

Bialkali

Material

Photocathode

Minimum Effective Area

mm dia.

—

Window Material

Dynode

Borosilicate glass

UV glass

Structure

—

Linear focused

Number of Stages

—

Base

14-pin glass base

E678-14C (supplied)

—

Suitable Socket

—

MAXIMUM RATINGS (Absolute Maximum Values)

Parameter

Value

2000

Unit

Vdc

°C

Between Anode and Cathode

Supply Voltage

Between Anode and Last Dynode

350

Average Anode Current

Ambient Temperature

0.2

-80 to +50

CHARACTERISTICS (at 25°C)

Parameter

Min.

—

Typ.

Max.

—

Unit

µA/lm

mA/W

µA/lm-b

A/lm

A/W

—

Luminous (2856K)

Cathode Sensitivity

Radiant at 420nm

Blue (CS-5-58 filter)

Luminous (2856K)

Radiant at 420nm

—

11.0

—

475

—

Anode Sensitivity

Gain

4.4 × 10⁵

5 × 10⁶

—

Anode Dark Current (after 30min. storage in darkness)

Anode Pulse Rise Time

200

—

1.7

Time Response

Electron Transit Time

—

Transit Time Spread (FWHM)

500

—

Pulse Linearity (at ±2% deviation)

10 (100)

—

NOTE : Anode characteristics are measured with the voltage distribution ratio A shown below.

): Pulse linearity is measured with the voltage distribution ratio B shown below.

(

VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE

Electrodes

Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10

Ratio A

1.5

Ratio B (Tapered)

1.2

1.5

3.3

Capacitors (µF)

0.01 0.02 0.02 0.04 0.06

Supply Voltage: 1500Vdc, K: Cathode, DY: Dynode, P: Anode

Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.

lnformation furnished by HAMAMATSU is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or omissions. Specifications are

subject to change without notice. No patent rights are granted to any of the circuits described herein.

1999 Hamamatsu Photonics K.K.

12 3 4

中文翻译

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