是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | O-XBCY-W2 | Reach Compliance Code: | unknown |
风险等级: | 5.77 | 最大击穿电压: | 27.1 V |
最小击穿电压: | 22.2 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | O-XBCY-W2 | JESD-609代码: | e0 |
最大非重复峰值反向功率耗散: | 5000 W | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
最低工作温度: | -65 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | UNIDIRECTIONAL |
最大功率耗散: | 6 W | 最大重复峰值反向电压: | 20 V |
表面贴装: | NO | 技术: | AVALANCHE |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
R5KP20AE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 5000W, 20V V(RWM), Unidirectional, 1 Element, Silicon, ROH | |
R5KP20AE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 5000W, 20V V(RWM), Unidirectional, 1 Element, Silicon, ROH | |
R5KP20AHE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 20V V(RWM), Unidirectional, | |
R5KP20ATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 5000W, 20V V(RWM), Unidirectional, 1 Element, Silicon, PLA | |
R5KP20CAHE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 20V V(RWM), Bidirectional, | |
R5KP20CE3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 5000W, 20V V(RWM), Bidirectional, 1 Element, Silicon, ROHS | |
R5KP20CE3TR | MICROSEMI |
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Trans Voltage Suppressor Diode, 5000W, 20V V(RWM), Bidirectional, 1 Element, Silicon, ROHS | |
R5KP20CTR | MICROSEMI |
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Trans Voltage Suppressor Diode, 5000W, 20V V(RWM), Bidirectional, 1 Element, Silicon, PLAS | |
R5KP20E3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 5000W, 20V V(RWM), Unidirectional, 1 Element, Silicon, ROH | |
R5KP20E3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 5000W, 20V V(RWM), Unidirectional, 1 Element, Silicon, ROH |