Datasheet > R5KP110TR

R5KP110TR

更新时间： 2024-11-29 19:10:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
4页	196K
描述
Trans Voltage Suppressor Diode, 5000W, 110V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, 5R, 2 PIN

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R5KP110TR 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	PLASTIC, 5R, 2 PIN	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.67
最大击穿电压：	149 V	最小击穿电压：	122 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-30 代码：	O-PBCY-W2
JESD-609代码：	e0	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	5000 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	1.56 W	认证状态：	Not Qualified
最大重复峰值反向电压：	110 V	表面贴装：	NO
技术：	AVALANCHE	端子面层：	TIN LEAD
端子形式：	WIRE	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

R5KP110TR 数据手册

5KP5.0 thru 5KP110A

5000 W TRANSIENT VOLTAGE

SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These Microsemi 5 kW Transient Voltage Suppressors (TVSs) are designed

for applications requiring protection of voltage-sensitive electronic devices

that may be damaged by harsh or severe voltage transients including

lightning per IEC61000-4-5 and classes with various source impedances

described herein. This series is available in 5.0 to 110 volt standoff voltages

(V_WM) in both unidirectional and bidirectional offered in two different package

designs for axial and radial configurations. Microsemi also offers numerous

other TVS products to meet higher and lower power demands and special

applications.

CASE 5A

(DO-204AR)

CASE

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Available in both Unidirectional and Bidirectional

• Protection from switching transients and induced RF

construction (Bidirectional with C or CA suffix)

• Protection from ESD, and EFT per IEC 61000-4-2

Available in both axial-leaded and radial packages

(include R prefix in part number for radial package

option shown in figure as “case 5R,” ie . R5KP5.0A,

R5KP28CA, 5KP110, etc.)

and IEC 61000-4-4

• Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

Class 1,2,3,4: 5KP5.0A to 5KP110A or CA

•

Selections for 5.0 to 110 volts standoff voltages (V_WM)

Class 5: 5KP5.0A to 5KP110A or CA (short distance)

Suppresses transients up to 5000 watts @ 10/1000 µs

Class 5: 5KP5.0A to 5KP36A or CA (long distance)

and 34,000 watts @ 8/20 µs (see Figure 1)

• Secondary lightning protection per IEC61000-4-5

•

Fast response

with 12 Ohms source impedance:

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers.

Class 1 & 2: 5KP5.0A to 5KP110A or CA

Class 3: 5KP5.0A to 5KP78A or CA

Class 4: 5KP5.0A to 5KP40A or CA

• Secondary lightning protection per IEC61000-4-5

•

Moisture classification is Level 1 with no dry pack

with 2 Ohms source impedance:

required per IPC/JEDEC J-STD-020B

Class 2: 5KP5.0A to 5KP70A or CA

Class 3: 5KP5.0 to 5KP36A or CA

Class 4: 5KP5.0 to 5KP18A or CA

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

• Peak Pulse Power dissipation at 25^ºC: 5000 watts at

•

CASE: Void-free transfer molded thermosetting

10/1000 µs (also see Figures 1, 2 and 3)

• Impulse repetition rate (duty factor): 0.05%

epoxy body meeting UL94V-0

TERMINALS: Tin-Lead plated readily solderable

per MIL-STD-750, method 2026

MARKING: Body marked with part number

• t_clamping(0 volts to V_(BR)min.): < 100 ps theoretical for

unidirectional and < 5 ns for bidirectional

•

• Operating and Storage temperature: -65^ºC to +150^ºC

POLARITY: Band denotes cathode. Bidirectional

• Thermal resistance: 20^ºC/W junction to lead, or

80^ºC/W junction to ambient when mounted on FR4 PC

board with 4 mm²copper pads (1oz) and track width 1

mm, length 25 mm

not marked for polarity

•

WEIGHT: 1.5 grams.

TAPE & Reel: Standard per EIA-296 for axial

package (add “TR” suffix to part number)

• Steady-State Power dissipation: 6 watts at T_L= 30^oC,

or 1.56 watts at T_A= 25^ºC when mounted on FR4 PC

board described for thermal resistance

•

See package dimensions on last page

• Forward Surge Voltage: 3.5 V maximum @ 100 Amps

8.3 ms half-sine wave

• Solder temperatures: 260 ^ºC for 10 s (maximum)

6-09-2003 REV A

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与R5KP110TR相关器件

型号	品牌	获取价格	描述	数据表
R5KP11AE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 11V V(RWM), Unidirectional, 1 Element, Silicon, ROH
R5KP11ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 11V V(RWM), Unidirectional, 1 Element, Silicon, PLA
R5KP11CE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 11V V(RWM), Bidirectional, 1 Element, Silicon, ROHS
R5KP120	NJSEMI	获取价格	TRANSIENT VOLTAGE SUPPRESSOR
R5KP120A	NJSEMI	获取价格	TRANSIENT VOLTAGE SUPPRESSOR
R5KP12CATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 12V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
R5KP12CE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 12V V(RWM), Bidirectional, 1 Element, Silicon, ROHS
R5KP12CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 12V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
R5KP12E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 12V V(RWM), Unidirectional, 1 Element, Silicon, ROH
R5KP12E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 12V V(RWM), Unidirectional, 1 Element, Silicon, ROH

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