5秒后页面跳转
R355CH04EK7 PDF预览

R355CH04EK7

更新时间: 2024-11-16 04:17:47
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
5页 272K
描述
Silicon Controlled Rectifier, 2600 A, 400 V, SCR

R355CH04EK7 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:FAST
标称电路换相断开时间:20 µs配置:SINGLE
关态电压最小值的临界上升速率:100 V/us最大直流栅极触发电流:300 mA
最大直流栅极触发电压:3 VJESD-30 代码:O-CEDB-N2
元件数量:1端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:2600 A重复峰值关态漏电流最大值:150000 µA
断态重复峰值电压:400 V重复峰值反向电压:280 V
表面贴装:YES端子形式:NO LEAD
端子位置:END触发设备类型:SCR
Base Number Matches:1

R355CH04EK7 数据手册

 浏览型号R355CH04EK7的Datasheet PDF文件第2页浏览型号R355CH04EK7的Datasheet PDF文件第3页浏览型号R355CH04EK7的Datasheet PDF文件第4页浏览型号R355CH04EK7的Datasheet PDF文件第5页 

与R355CH04EK7相关器件

型号 品牌 获取价格 描述 数据表
R355CH04EK8 IXYS

获取价格

Silicon Controlled Rectifier, 2600A I(T)RMS, 400V V(DRM), 320V V(RRM), 1 Element
R355CH04EK9 IXYS

获取价格

Silicon Controlled Rectifier, 2600A I(T)RMS, 400V V(DRM), 360V V(RRM), 1 Element
R355CH04EKO IXYS

获取价格

Silicon Controlled Rectifier, 1998.61 A, 400 V, SCR
R355CH04EL0 LITTELFUSE

获取价格

Silicon Controlled Rectifier, 1620000mA I(T), 400V V(DRM),
R355CH04FH IXYS

获取价格

Silicon Controlled Rectifier, 2600A I(T)RMS, 1620000mA I(T), 400V V(DRM), 400V V(RRM), 1 E
R355CH04FH0 IXYS

获取价格

Silicon Controlled Rectifier, 1620000mA I(T), 400V V(DRM)
R355CH04FH5 IXYS

获取价格

Silicon Controlled Rectifier, 2600 A, 400 V, SCR
R355CH04FH6 IXYS

获取价格

Silicon Controlled Rectifier, 2600A I(T)RMS, 400V V(DRM), 240V V(RRM), 1 Element
R355CH04FH7 IXYS

获取价格

Silicon Controlled Rectifier, 2600A I(T)RMS, 400V V(DRM), 280V V(RRM), 1 Element
R355CH04FH8 IXYS

获取价格

Silicon Controlled Rectifier, 2600 A, 400 V, SCR