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R355CH04CK6 PDF预览

R355CH04CK6

更新时间: 2024-11-15 13:30:03
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
5页 276K
描述
Silicon Controlled Rectifier, 2600A I(T)RMS, 400V V(DRM), 240V V(RRM), 1 Element

R355CH04CK6 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:FAST
标称电路换相断开时间:20 µs配置:SINGLE
关态电压最小值的临界上升速率:20 V/us最大直流栅极触发电流:300 mA
最大直流栅极触发电压:3 VJESD-30 代码:O-CEDB-N2
元件数量:1端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:2600 A重复峰值关态漏电流最大值:150000 µA
断态重复峰值电压:400 V重复峰值反向电压:240 V
表面贴装:YES端子形式:NO LEAD
端子位置:END触发设备类型:SCR
Base Number Matches:1

R355CH04CK6 数据手册

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与R355CH04CK6相关器件

型号 品牌 获取价格 描述 数据表
R355CH04CK7 IXYS

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Silicon Controlled Rectifier, 2600A I(T)RMS, 400V V(DRM), 280V V(RRM), 1 Element
R355CH04CK9 IXYS

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Silicon Controlled Rectifier, 2600A I(T)RMS, 400V V(DRM), 360V V(RRM), 1 Element
R355CH04CKO IXYS

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Silicon Controlled Rectifier, 1998.61A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element
R355CH04CL0 LITTELFUSE

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Silicon Controlled Rectifier, 1620000mA I(T), 400V V(DRM),
R355CH04DH0 IXYS

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Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),1.62KA I(T),TO-200A
R355CH04DH5 IXYS

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Silicon Controlled Rectifier, 2600A I(T)RMS, 400V V(DRM), 200V V(RRM), 1 Element
R355CH04DH7 IXYS

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Silicon Controlled Rectifier, 2600A I(T)RMS, 400V V(DRM), 280V V(RRM), 1 Element
R355CH04DH9 IXYS

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Silicon Controlled Rectifier, 2600A I(T)RMS, 400V V(DRM), 360V V(RRM), 1 Element
R355CH04DHO IXYS

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Silicon Controlled Rectifier, 1998.61A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element
R355CH04DJ6 IXYS

获取价格

Silicon Controlled Rectifier, 2600A I(T)RMS, 400V V(DRM), 240V V(RRM), 1 Element