Datasheet > R325CH14EH0

R325CH14EH0

更新时间： 2024-11-24 07:19:35

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
12页	282K
描述
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,1.4KV V(DRM),1.52KA I(T),TO-200AC

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R325CH14EH0 数据手册

Date:- 21 Dec, 2000

Data Sheet Issue:- 1

WESTCODE

Distributed Gate Thyristor

Types R325CH02 to R325CH14

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

200-1400

300-1500

MAXIMUM

LIMITS

1178

OTHER RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Mean on-state current, T_sink=55°C, (note 2)

Mean on-state current. T_sink=85°C, (note 2)

Mean on-state current. T_sink=85°C, (note 3)

Nominal RMS on-state current, T_sink=25°C, (note 2)

D.C. on-state current, T_sink=25°C, (note 4)

767

433

2395

892

Peak non-repetitive surge t_p=10ms, V_RM=0.6V_RRM, (note 5)

A²s

A/µs

≤

18.7

Peak non-repetitive surge t_p=10ms, V_RM10V, (note 5)

I²t capacity for fusing t_p=10ms, V_RM=0.6V_RRM, (note 5)

I²t capacity for fusing t_p=10ms, V_RM10V, (note 5)

1.45×10⁶

1.75×10⁶

1000

1500

I²t

≤

Maximum rate of rise of on-state current (repetitive), (Note 6)

Maximum rate of rise of on-state current (non-repetitive), (Note 6)

Peak reverse gate voltage

di_T/dt

V_RGM

P_G(AV)

P_GM

V_GD

Mean forward gate power

Peak forward gate power

Non-trigger gate voltage, (Note 7)

Operating temperature range

0.25

T_HS

-40 to +125

-40 to +150

°C

T_stg

Storage temperature range

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

≤

6) V_D=67% V_DRM, I_FG=2A, t_r0.5µs, T_case=125°C.

7) Rated V_DRM

Data Sheet. Types R325CH02 to R325CH14 Issue 1

Page 1 of 12

December, 2000

12 3 4 5 6 7...12

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R325CH14EH4	IXYS	获取价格	Silicon Controlled Rectifier, 2398A I(T)RMS, 1400V V(DRM), 560V V(RRM), 1 Element
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