Datasheet > R325CH10CH0

R325CH10CH0

更新时间： 2024-11-19 06:39:55

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
12页	282K
描述
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,1KV V(DRM),1.52KA I(T),TO-200AC

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

R325CH10CH0 数据手册

Date:- 21 Dec, 2000

Data Sheet Issue:- 1

WESTCODE

Distributed Gate Thyristor

Types R325CH02 to R325CH14

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

200-1400

300-1500

MAXIMUM

LIMITS

1178

OTHER RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Mean on-state current, T_sink=55°C, (note 2)

Mean on-state current. T_sink=85°C, (note 2)

Mean on-state current. T_sink=85°C, (note 3)

Nominal RMS on-state current, T_sink=25°C, (note 2)

D.C. on-state current, T_sink=25°C, (note 4)

767

433

2395

892

Peak non-repetitive surge t_p=10ms, V_RM=0.6V_RRM, (note 5)

A²s

A/µs

≤

18.7

Peak non-repetitive surge t_p=10ms, V_RM10V, (note 5)

I²t capacity for fusing t_p=10ms, V_RM=0.6V_RRM, (note 5)

I²t capacity for fusing t_p=10ms, V_RM10V, (note 5)

1.45×10⁶

1.75×10⁶

1000

1500

I²t

≤

Maximum rate of rise of on-state current (repetitive), (Note 6)

Maximum rate of rise of on-state current (non-repetitive), (Note 6)

Peak reverse gate voltage

di_T/dt

V_RGM

P_G(AV)

P_GM

V_GD

Mean forward gate power

Peak forward gate power

Non-trigger gate voltage, (Note 7)

Operating temperature range

0.25

T_HS

-40 to +125

-40 to +150

°C

T_stg

Storage temperature range

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

≤

6) V_D=67% V_DRM, I_FG=2A, t_r0.5µs, T_case=125°C.

7) Rated V_DRM

Data Sheet. Types R325CH02 to R325CH14 Issue 1

Page 1 of 12

December, 2000

12 3 4 5 6 7...12

中文翻译

下载PDF

与R325CH10CH0相关器件

型号	品牌	获取价格	描述	数据表
R325CH10CH2	IXYS	获取价格	Silicon Controlled Rectifier, 2398 A, 1000 V, SCR
R325CH10CH3	IXYS	获取价格	Silicon Controlled Rectifier, 2398A I(T)RMS, 1000V V(DRM), 300V V(RRM), 1 Element
R325CH10CH4	IXYS	获取价格	Silicon Controlled Rectifier, 2398 A, 1000 V, SCR
R325CH10CH5	IXYS	获取价格	Silicon Controlled Rectifier, 2398 A, 1000 V, SCR
R325CH10CH6	IXYS	获取价格	Silicon Controlled Rectifier, 2398 A, 1000 V, SCR
R325CH10CH7	IXYS	获取价格	Silicon Controlled Rectifier, 2398A I(T)RMS, 892000mA I(T), 1000V V(DRM), 700V V(RRM), 1 E
R325CH10CH8	IXYS	获取价格	Silicon Controlled Rectifier, 2398A I(T)RMS, 1000V V(DRM), 800V V(RRM), 1 Element
R325CH10CH9	IXYS	获取价格	Silicon Controlled Rectifier, 2398 A, 1000 V, SCR
R325CH10CHO	IXYS	获取价格	Silicon Controlled Rectifier, 1852.6 A, 1000 V, SCR
R325CH10CJ2	IXYS	获取价格	Silicon Controlled Rectifier, 2398 A, 1000 V, SCR