Datasheet > R2A25107KFP

R2A25107KFP

更新时间： 2024-11-21 12:31:31

品牌	Logo	应用领域
瑞萨 - RENESAS		驱动器
页数	文件大小	规格书
24页	246K
描述
Intelligent Power Device for MOSFET Pre-drive

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R2A25107KFP 数据手册

Preliminary Data Sheet

R2A25107KFP

Intelligent Power Device for MOSFET Pre-drive

R07DS0689EJ0100

Rev.1.00

Mar 22, 2012

Description

The R2A25107KFP device is an intelligent power device to pre-drive the FET inverter of a 3-phase blushless motor.

This device contains three sets of pre-driver that are applicable to both 12-V and 24-V battery systems. This IC also

contains a step down converter, charge pump circuit for the power supply of high-side MOSFET gate driver, 5 V series

regulator, watchdog timer and protection circuits for thermal shutdown (TSD) and over-current detection.

Features



Wide operating voltage range: 7 V to 36 V (VBAT, VBAT2)

On-chip 3-phase pre-driver circuit

 PWM control: up to 20 kHz

 Totem pole type MOSFET gate drive circuit

On-chip power supplies

 Step down converter: 6.2 V typ.

 Charge pump circuit for power supply of high-side FET drive: >5 V

 5-V series regulator for MCU: <70 mA

On-chip protection circuits



 Thermal shutdown (TSD)

 Over-current detection in the step down converter

 Over-current detection of motor current

On-chip watchdog timer circuit (WDT)

Band gap reference circuit

Internal oscillator: 265 kHz typ.

48-pin LFQFP package



Application



Pre-driver for middle class 3-phase blushless motors (up to 50 A)

Best suited for automotive

Ordering Information

Part No.

Lead Plating

Packing

Package

PLQP0048KB-A

R2A25107KFP#U5

Sn-Cu

Tray

Note: The information contained in this document is the one that was obtained when the document was issued, and

may be subject to change.

R07DS0689EJ0100 Rev.1.00

Mar 22, 2012

Page 1 of 22

12 3 4 5 6 7...24

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