Datasheet > R2A20101BM/NP

R2A20101BM/NP

更新时间： 2024-11-21 06:06:23

品牌	Logo	应用领域
瑞萨 - RENESAS		转换器
页数	文件大小	规格书
10页	167K
描述
Monolithic Synchronous Step-Down DC/DC Converter

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R2A20101BM/NP 数据手册

R2A20101BM/NP

Monolithic Synchronous Step-Down DC/DC Converter

REJ03D0790-0300

Rev.3.00

May 14, 2008

Features

•

Built-in low Ron power MOS FETs

Pch Ron = 0.30 Ω (Typ), Nch Ron = 0.14 Ω (Typ)

High switching frequency: 2 MHz (Max)

Output current: 650 mA (Max)

Output ON/OFF control

Vout control

Power good monitor

Current share for redundant power supply operation

Vout = 0.5 V to (VIN – 0.5) V

•

Application

•

POL (Point of Load) power supplies

Power supply for microcomputer systems

MCU-Core, I/O, Memory (DDR, SRAM, FLASH, HDD, etc.), FPGA, DSP, Graphic Processor

Battery powered equipment systems

•

Cellular phone (CDMA power amplifier, MCU, DSP, ASIC), PDA, Digital camera, Portable game, Handy terminal

Operating Circuit Example

2.2µH

Vin

2.5V to 5.5V

Iout: Up to 650mA

Ccf1

47pF

R2A20101

Vout

1.8V

VIN

PGND

CRFB

VFB

Cin

4.7µF

Rcf2

68kΩ

ON/OFF

Rvf2

390kΩ

Power Good

Signal Output

Cout

4.7µF

PWGD

EAO

Rcf1

100kΩ

Rvf1

150kΩ

Error Amp. Output

(for Current Share)

Vref Input

(for Vout Control)

VREF

(Internal Vref = 0.5V)

AGND

Notes: 1. All ceramic capacitor

2. Rcf1 : Rcf2(recommend) = 3 : 2

3. fsw is adjustable by Ccf1, Rcf1, and Rcf2.

REJ03D0790-0300 Rev.3.00 May 14, 2008

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12 3 4 5 6 7...10

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