Datasheet > R1RW0408D

R1RW0408D

更新时间： 2022-11-24 21:43:17

品牌	Logo	应用领域
瑞萨 - RENESAS		静态存储器
页数	文件大小	规格书
14页	86K
描述
4M High Speed SRAM (512-kword x 8-bit)

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数据手册

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R1RW0408D 数据手册

R1RW0408D Series

AC Characteristics

(Ta = 0 to +70°C, V_CC= 3.3 V ± 0.3 V, unless otherwise noted.)

Test Conditions

•

Input pulse levels: 3.0 V/0.0 V

Input rise and fall time: 3 ns

Input and output timing reference levels: 1.5 V

Output load: See figures (Including scope and jig)

1.5 V

3.3 V

319Ω

RL=50 Ω

D_OUT

Zo=50 Ω

D_OUT

353Ω

30 pF

5 pF

Output load (A)

Output load (B)

(for t_CLZ, t_OLZ, t_CHZ, t_OHZ, t_WHZ, and t_OW

)

Read Cycle

R1RW0408D

-2

Symbol Min

Parameter

Max

Unit

Notes

Read cycle time

t_RC

Address access time

t_AA

Chip select access time

t_ACS

t_OE

Output enable to output valid

Output hold from address change

Chip select to output in low-Z

Output enable to output in low-Z

Chip deselect to output in high-Z

Output disable to output in high-Z

t_OH

t_CLZ

t_OLZ

t_CHZ

t_OHZ

Rev.1.00, Mar.12.2004, page 7 of 12

1...4 5 678 9 10...14

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