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R1RW0416DI_10 PDF预览

R1RW0416DI_10

更新时间: 2024-02-10 19:05:12
品牌 Logo 应用领域
瑞萨 - RENESAS 静态存储器
页数 文件大小 规格书
13页 467K
描述
Wide Temperature Range Version 4M High Speed SRAM (256-kword × 16-bit)

R1RW0416DI_10 数据手册

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Datasheet  
R1RW0416DI Series  
Wide Temperature Range Version  
4M High Speed SRAM (256-kword × 16-bit)  
REJ03C0109-0201  
Rev.2.01  
Jun 16, 2010  
Description  
The R1RW0416DI is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access  
time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most  
appropriate for the application which requires high speed, high density memory and wide bit width configuration, such  
as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin  
plastic TSOPII for high density surface mounting.  
Features  
Single 3.3 V supply: 3.3 V 0.3 V  
Access time: 10ns/12 ns (max)  
Completely static memory  
No clock or timing strobe required  
Equal access and cycle times  
Directly TTL compatible  
All inputs and outputs  
Operating current: 145/130 mA (max)  
TTL standby current: 40 mA (max)  
CMOS standby current: 5 mA (max)  
Center VCC and VSS type pin out  
Temperature range: 40 to +85°C  
Ordering Information  
Type No.  
R1RW0416DGE-0PI  
R1RW0416DGE-2PI  
R1RW0416DSB-0PI  
R1RW0416DSB-2PI  
Access time  
Package  
10ns  
12 ns  
10 ns  
12 ns  
400-mil 44-pin plastic SOJ (44P0K)  
400-mil 44-pin plastic TSOPII (44P3W-H)  
REJ03C0109-0201 Rev.2.01  
Jun 16, 2010  
Page 1 of 11  

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