Datasheet > R1RW0408D-I

R1RW0408D-I

更新时间： 2023-12-20 18:44:44

品牌	Logo	应用领域
瑞萨 - RENESAS		静态存储器
页数	文件大小	规格书
11页	356K
描述
Wide Temperature Range Version 4M High-speed SRAM (512-kword × 8-bit)

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R1RW0408D-I 数据手册

Datasheet

R1RW0408DI Series

Wide Temperature Range Version

R10DS0287EJ0100

Rev.1.00

Nov.18.19

4M High Speed SRAM (512-kword × 8-bit)

Description

The R1RW0408DI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high

speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

technology. It is most appropriate for the application which requires high speed, high density memory and

wide bit width configuration, such as cache and buffer memory in system. The R1RW0408DI is packaged in

400-mil 36-pin SOJ for high density surface mounting.

Features

•

Single 3.3V supply: 3.3V ± 0.3V

Access time: 12ns (max)

Completely static memory

⎯

No clock or timing strobe required

•

Equal access and cycle times

Directly TTL compatible

⎯

All inputs and outputs

•

Operating current: 100mA (max)

TTL standby current: 40mA (max)

CMOS standby current : 5mA (max)

Temperature range: −40 to +85°C

Ordering Information

Type No.

Access time

12ns

Package

R1RW0408DGE-2PI

400-mil 36-pin plastic SOJ

R10DS0287EJ0100 Rev.1.00

Nov.18.19

Page 1 of

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