Datasheet > R1LV3216RSD

R1LV3216RSD

更新时间： 2024-11-22 01:06:55

品牌	Logo	应用领域
瑞萨 - RENESAS		静态存储器
页数	文件大小	规格书
20页	150K
描述
32Mb Advanced LPSRAM (2M word x 16bit / 4M word x 8bit)

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R1LV3216RSD 数据手册

R1LV3216R Series

32Mb Advanced LPSRAM (2M word x 16bit / 4M word x 8bit)

REJ03C0367-0100

Rev.1.00

2009.05.07

Description

The R1LV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2,097,152-word by

16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.

The R1LV3216R Series is suitable for memory applications where a simple interfacing, battery operating

and battery backup are the important design objectives.

The R1LV3216R Series is provided in 48-pin thin small outline package [TSOP (I): 12mm x 20mm with pin

pitch of 0.5mm] and 52-pin micro thin small outline package [µTSOP (II): 10.79mm x 10.49mm with pin pitch

of 0.4mm]. It gives the best solution for compaction of mounting area as well as flexibility of wiring pattern of

printed circuit boards.

Features

•

Single 2.7~3.6V power supply

Small stand-by current: 4 µA (3.0V, typical)

No clocks, No refresh

All inputs and outputs are TTL compatible.

Easy memory expansion by CS1#, CS2, LB# and UB#

Common Data I/O

Three-state outputs: OR-tie Capability

OE# prevents data contention on the I/O bus

Ordering Information

Type No.

Access time

55 ns

Package

R1LV3216RSA-5S%

R1LV3216RSA-7S%

R1LV3216RSD-5S%

R1LV3216RSD-7S%

12mm x 20mm 48-pin plastic TSOP (I)

(normal-bend type) (48P3R)

350 mil 52-pin plastic μ-TSOP (II)

(normal-bend type) (52PTG)

70 ns

55 ns

70 ns

% - Temperature version; see table below

Temperature Range

0 ~ +70 °C

-40 ~ +85 °C

REJ03C0367-0100, Rev.1.00, 2009.05.07

Page 1 of 16

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