R1500F-AP

更新时间： 2024-11-25 13:12:51

品牌	Logo	应用领域
美微科 - MCC		高压
页数	文件大小	规格书
2页	75K
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中文翻译

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数据手册

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R1500F-AP 数据手册

R1200

THRU

R2000

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

500 Milliamp

High Voltage

Silicon Rectifier

1200 to 2000 Volts

Features

Low Cost

Low Leakage

Low Forward Voltage Drop

High Current Capability

High Voltage

DO-41

Maximum Ratings

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

MCC

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak Reverse

Voltage

Maximum Maximum

RMS

Voltage

Blocking

Voltage

1200V

1500V

1800V

2000V

R1200

R1500

R1800

R2000

---

1200V

1500V

1800V

2000V

840V

1050V

1260V

1400V

Cathode

Mark

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

500mA

T_A= 50°C

Peak Forward Surge

Current

I_FSM

30A

8.3ms, half sine

DIMENSIONS

Maximum

INCHES

MIN

.166

.080

.028

MIN

4.10

2.00

.70

Instantaneous

Forward Voltage

R1200-R1800

R2000

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

DIM

MAX

.205

.107

.034

---

MAX

5.20

2.70

.90

NOTE

V_F

I_R

1.6V

2.6V

I_FM= 0.5A;

T_A= 50°C

1.000

25.40

---

5.0mA

50mA

T_A= 25°C

T_A= 100°C

Typical Junction

Capacitance

C_J

30pF

Measured at

1.0MHz, V_R=4.0V

www.mccsemi.com

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