Datasheet > R1450

R1450

更新时间： 2024-10-01 22:24:51

品牌	Logo	应用领域
HAMAMATSU		光电
页数	文件大小	规格书
4页	99K
描述
PHOTOMULTIPLIER TUBE

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R1450 数据手册

PHOTOMULTIPLIER TUBE

R1450

Fast Time Response (Especially Low TTS)

For Positron CT and High Energy Physics

19mm (3/4 Inch) Diameter, 10-stage, Bialkali Photocathode, Head-On

GENERAL

Parameter

Description/Value

300 to 650

420

Unit

Spectral Response

Wavelength of Maximum Response

—

mm dia.

—

Bialkali

Borosilicate glass

Linear focused

Material

Minimum Useful Size

Photocathode

Window Material

Dynode

—

Structure

Number of Stage

—

Base

12-pin glass base

MAXIMUM RATINGS (Absolute Maximum Values)

Parameter

Value

1800

350

0.1

-80 to +50

Unit

Vdc

°C

Between Anode and Cathode

Between Anode and Last Dynode

Supply Voltage

Average Anode Current

Ambient Temperature

CHARACTERISTICS (at 25°C)

Parameter

Luminous (2856K)

Radiant at 420nm

Blue (CS-5-58 filter)

Luminous (2856K)

Min.

—

100

—

Typ.

115

11.0

200

1.7 × 10⁶

1.8

0.76

0.6/CsF

7.8

Max.

—

Unit

µA/lm

mA/W

µA/lm-b

A/lm

—

Cathode Sensitivity

Anode Sensitivity

Gain

Anode Dark Current (after 30min. storage in darkness)

Anode Pulse Rise Time

Electron Transit Time

Transit Time Spread (FWHM)

Coincident Resolving Time/Scintillator

Typical Pulse Height Resolution

Time Response

—

±2% Deviation

±5% Deviation

Pulse Linearity

NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.

VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE

Electrodes

Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10

Ratio

1.5 0.75

Supply Voltage: 1500Vdc, K: Cathode, Dy: Dynode, P: Anode

Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are

subject to change without notice. No patent rights are granted to any of the circuits described herein.

1998 Hamamatsu Photonics K.K.

12 3 4

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