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R1387 PDF预览

R1387

更新时间: 2024-11-20 22:24:51
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PHOTOMULTlPLlER TUBE

R1387 数据手册

 浏览型号R1387的Datasheet PDF文件第2页 
PHOTOMULTlPLlER TUBE  
R1387  
300 to 850nm Response (S–20)  
38mm(1–1/2 Inch) Diameter, 10–stage, Head–On Type  
The configuration and basing diagram of the R1387 are identical with 6199 Photomultiplier tubes.  
GENERAL  
Parameter  
Description/Value  
Unit  
nm  
Spectral Response  
300 to 850  
Wavelength of Maximum Response  
420  
nm  
MateriaI  
Minimum Effective Area  
Multialkali  
Photocathode  
34  
mm dia.  
Window Material  
Dynode  
Borosilicate glass  
Circular cage  
Structure  
Number of Stages  
Anode to Last Dynode  
Anode to All Other Electrodes  
10  
3.0  
pF  
pF  
Direct Interelectrode  
Capacitances  
Base  
SuitabIe Socket  
Weight  
4.0  
12 pin base JEDEC No.B12 43  
E678 12A(supplied)  
81  
g
MAXIMUM RATINGS (Absolute Maximum Values)  
Parameter  
Between Anode and Cathode  
Between Anode and Last Dynode  
Value  
1250  
250  
0.2  
-30 to +50  
Unit  
Vdc  
Vdc  
mA  
°C  
Supply Voltage  
Avarage Anode Current  
Ambient Temperature  
CHARACTERISTlCS (at 25°C)  
Parameter  
Luminous (2856K)  
Min.  
80  
Typ.  
150  
Max.  
Unit  
A/lm  
Cathode  
Sensitivity  
64  
0.2  
50  
2.1 104  
3.3 105  
4
Radiant at 420nm  
mA/W  
Red/White Ratio (R 68)  
Luminous (2856K)  
Radiant at 420nm  
A/lm  
A/W  
10  
Anode  
Sensitivity  
Gain  
Anode Dark Current (after 30min. storage in darkness)  
25  
nA  
ns  
ns  
Anode Pulse Rise Time  
Electron Transit Time  
2.8  
40  
Time Response  
NOTE: Anode characteristics are measured with the voItage distribution ratio shown below.  
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE  
K
Dy1  
Dy2  
Dy3  
Dy4  
Dy5  
Dy6  
Dy7  
Dy8  
Dy9  
Dy10  
P
Electrodes  
Ratio  
2
1
1
1
1
1
1
1
1
1
1
SuppIy Voltage : 1000Vdc,  
K : Cathode, Dy : Dynode, P : Anode  
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are  
subject to change without notice. No patent rights are granted to any of the circuits described herein.  
1999 Hamamatsu Photonics K.K.  
©

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