Datasheet > R1387

R1387

更新时间： 2024-09-23 22:24:51

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描述
PHOTOMULTlPLlER TUBE

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中文翻译

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数据手册

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R1387 数据手册

PHOTOMULTlPLlER TUBE

R1387

300 to 850nm Response (S–20)

38mm(1–1/2 Inch) Diameter, 10–stage, Head–On Type

The configuration and basing diagram of the R1387 are identical with 6199 Photomultiplier tubes.

GENERAL

Parameter

Description/Value

Unit

Spectral Response

300 to 850

Wavelength of Maximum Response

420

MateriaI

Minimum Effective Area

Multialkali

Photocathode

mm dia.

Window Material

Dynode

Borosilicate glass

Circular cage

Structure

Number of Stages

Anode to Last Dynode

Anode to All Other Electrodes

3.0

Direct Interelectrode

Capacitances

Base

SuitabIe Socket

Weight

4.0

12 pin base JEDEC No.B12 43

E678 12A(supplied)

MAXIMUM RATINGS (Absolute Maximum Values)

Parameter

Between Anode and Cathode

Between Anode and Last Dynode

Value

1250

250

0.2

-30 to +50

Unit

Vdc

°C

Supply Voltage

Avarage Anode Current

Ambient Temperature

CHARACTERISTlCS (at 25°C)

Parameter

Luminous (2856K)

Min.

Typ.

150

Max.

Unit

A/lm

Cathode

Sensitivity

0.2

2.1 10⁴

3.3 10⁵

Radiant at 420nm

mA/W

Red/White Ratio (R 68)

Luminous (2856K)

Radiant at 420nm

A/lm

A/W

Anode

Sensitivity

Gain

Anode Dark Current (after 30min. storage in darkness)

Anode Pulse Rise Time

Electron Transit Time

2.8

Time Response

NOTE: Anode characteristics are measured with the voItage distribution ratio shown below.

VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE

Dy1

Dy2

Dy3

Dy4

Dy5

Dy6

Dy7

Dy8

Dy9

Dy10

Electrodes

Ratio

SuppIy Voltage : 1000Vdc,

K : Cathode, Dy : Dynode, P : Anode

Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are

subject to change without notice. No patent rights are granted to any of the circuits described herein.

1999 Hamamatsu Photonics K.K.

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