生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CEDB-N2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.84 |
其他特性: | HIGH RELIABILITY | 标称电路换相断开时间: | 25 µs |
配置: | SINGLE | 关态电压最小值的临界上升速率: | 20 V/us |
最大直流栅极触发电流: | 300 mA | 最大直流栅极触发电压: | 3 V |
JESD-30 代码: | O-CEDB-N2 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | DISK BUTTON |
认证状态: | Not Qualified | 最大均方根通态电流: | 5298.75 A |
重复峰值关态漏电流最大值: | 300000 µA | 断态重复峰值电压: | 200 V |
重复峰值反向电压: | 200 V | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | END |
触发设备类型: | SCR |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
R1200CH02CH0 | IXYS | Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),5.48KA I(T),TO-200A |
获取价格 |
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R1200CH02CHO | IXYS | Silicon Controlled Rectifier, 5298.75A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element |
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R1200CH02CJO | IXYS | Silicon Controlled Rectifier, 5298.75A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element |
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R1200CH02CK0 | IXYS | Silicon Controlled Rectifier, 5480000mA I(T), 200V V(DRM) |
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R1200CH02CKO | IXYS | Silicon Controlled Rectifier, 5298.75 A, 200 V, SCR |
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R1200CH02DH0 | IXYS | Silicon Controlled Rectifier, 5480000mA I(T), 200V V(DRM) |
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