SDR1183
Thru
SDR1190
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
35 Amp
Part Number/Ordering Information 1/
SDR11
50-600 Volt
__ __
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
Screening 2/ __ = Not Screened
TX = TX Level
5 μsec
STANDARD RECOVERY
RECTIFIER
TXV = TXV Level
S = S Level
Pin Configuration __ = Normal (Cathode to Stud)
Features:
(See Table 1)
R = Reverse (Anode to Stud)
•
•
•
•
•
•
•
•
•
Low Reverse Leakage Current
Single Chip Construction
Family/Voltage
83 = 50V
PIV to 600V
84 = 100V
85 = 150V
86 = 200V
87 = 300V
88 = 400V
89 = 500V
90 = 600V
Hermetically Sealed
Low Thermal Resistance
Higher Voltage Devices Up to 1400V Available*
Fast and Ultra Fast Recovery Versions Available*
For Reverse Polarity Add Suffix “R”
Replacement for 1N1183, 1N1184, 1N1185, 1N1186,
1N1187, 1N1188, 1N1189, and 1N1190
•
TX, TXV, and S-Level Screening Available 2/
*Contact Factory
Maximum Ratings
Symbol
Value
Units
SDR1183
50
SDR1184
SDR1185
SDR1186
SDR1187
SDR1188
SDR1189
SDR1190
100
150
200
300
400
500
600
VRRM
VRWM
VR
Peak Repetitive Reverse and DC Blocking
Voltage
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C)
Io
IFSM
35
500
Amps
Amps
ºC
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)
Operating & Storage Temperature
TOP & TSTG
RθJC
-65 to +150
1.0
Maximum Total Thermal Resistance
Junction to Case
ºC/W
DO-5:
Notes:
1/ For ordering information, price, operating curves, and availability- contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: R00005B
DOC