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R-11-055-G-A PDF预览

R-11-055-G-A

更新时间: 2024-11-20 04:59:27
品牌 Logo 应用领域
SOURCE /
页数 文件大小 规格书
5页 895K
描述
Optoelectronic Device, HERMETIC SEALED, METAL, TO-46, 3 PIN

R-11-055-G-A 数据手册

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InGaAs PIN Photodiode  
R-11-XXX-G-A(B)  
Features  
• InGaAs/InP PIN Photodiode  
• High Responsivity @1310 nm and 1550 nm  
• Low dark current  
• Fast pulse response  
• -40 to 85ºC operating temperature  
• Hermetically sealed 3-pin metal case  
• Active diameter is 40, 55, 75,100 or 300 µm  
• TO-46 package wih intergrated flat window cap  
• Connectorized receptacle module application  
• Coaxial pigtail module application  
• Data and Telecommunication application  
Absolute Maximum Rating (Tc=25ºC)  
Parameter  
Reverse Voltage  
Symbol  
Min  
-
Max  
20  
Unit  
V
VR  
Forward Current  
Reverse Current  
IF  
-
2
mA  
mA  
ºC  
IR  
-
1
Operating Temperature  
Storage Temperature  
T
-40  
-40  
+85  
+85  
opr  
T
ºC  
stg  
R-11-040-G-A(B)  
Optical and Electrical Characteristics( Tc=25ºC )  
Parameter  
Symbol  
Min  
-
Typical  
Max  
-
Unit  
µm  
Test condition  
Active area(Dia)  
-
40  
1310  
0.8  
-
-
Detection Range  
Responsivity  
Dark Current  
Capacitance  
Bandwidth  
-
1100  
1650  
nm  
-
R
0.75  
-
0.8  
-
A/W  
nA  
VR = 5V, λ=1310 nm  
VR = 5V  
Idark  
C
-
-
0.7  
-
pF  
VR = 5V  
BW  
4
-
GHz  
VR = 5V  
R-11-055-G-A(B)  
Optical and Electrical Characteristics( Tc=25ºC )  
Parameter  
Symbol  
Min  
-
Typical  
Max  
-
Unit  
µm  
Test condition  
Active area(Dia)  
-
55  
1310  
0.8  
-
-
Detection Range  
Responsivity  
Dark Current  
Capacitance  
Bandwidth  
-
1100  
1650  
nm  
-
R
0.75  
-
0.8  
-
A/W  
nA  
VR = 5V, λ=1310 nm  
VR = 5V  
Idark  
C
-
-
0.8  
-
pF  
VR = 5V  
BW  
3
-
GHz  
VR = 5V  
20550 Nordhoff St. • Chatsworth, CA 91311 • tel: 818.773.9044 • fax: 818.576.9486  
9F, No 81, Shui Lee Rd. • Hsinchu, Taiwan, R.O.C. • tel: 886.3.5169222 • fax: 886.3.5169213  
LUMINENTOIC.COM  
LUMNDS008-OCT1504  
rev. A.0  
1

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